Product Information

ESD11N5.0ST5G

ESD11N5.0ST5G electronic component of ON Semiconductor

Datasheet
ON Semiconductor TVS Diodes - Transient Voltage Suppressors LOW CAP BI DIRECT TV

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4762: USD 0.0911 ea
Line Total: USD 433.8182

1089941 - Global Stock
Ships to you between
Fri. 06 Oct to Thu. 12 Oct
MOQ: 4762  Multiples: 4762
Pack Size: 4762
Availability Price Quantity
1089941 - Global Stock


Ships to you between Fri. 06 Oct to Thu. 12 Oct

MOQ : 4762
Multiples : 4762

Stock Image

ESD11N5.0ST5G
ON Semiconductor

4762 : USD 0.0911

     
Manufacturer
ON Semiconductor
Product Category
ESD Suppressors / TVS Diodes
RoHS - XON
Y Icon ROHS
Series
Esd11n5.0St5g
Product Type
Esd Suppressors
Vesd - Voltage ESD Contact
8 kV
Vesd - Voltage ESD Air Gap
15 kV
Polarity
Bidirectional
Number of Channels
1 Channel
Termination Style
Smd/Smt
Breakdown Voltage
5.8 V
Working Voltage
5 V
Clamping Voltage
12 V
Ipp - Peak Pulse Current
1 A
Cd - Diode Capacitance
0.9 pF
Package / Case
DSN - 2
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 125 C
Packaging
Reel
Peak Surge Current
1 A
Height
0.3 mm
Length
0.6 mm
Operating Temperature Range
- 40 C To + 125 C
Width
0.3 mm
Brand
On Semiconductor
Mounting Style
Smd/Smt
Factory Pack Quantity :
5000
Cnhts
8541100000
Hts Code
8541100040
Mxhts
85411001
Pd - Power Dissipation
250 mW
Subcategory
Circuit Protection
Taric
8541100000
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ESD11N5.0ST5G ESD Protection Diodes MicroPackaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, www.onsemi.com and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. Specification Features Low Capacitance 0.6 pF MARKING Low Clamping Voltage DIAGRAM Small Body Outline Dimensions: 0.60 mm x 0.30 mm PIN 1 Low Body Height: 0.3 mm DSN2 XXXX Standoff Voltage: 5.0 V CASE 152AA YYY Low Leakage Response Time is < 1 ns XXXX = Specific Device Code YYY = Year Code IEC6100042 Level 4 ESD Protection These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION Mechanical Characteristics Device Package Shipping MOUNTING POSITION: Any ESD11N5.0ST5G DSN2 5000/Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260C (PbFree) Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please MAXIMUM RATINGS refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Rating Symbol Value Unit IEC 6100042 (ESD) Contact 8.0 kV Air 15 Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 40 to +125 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: November, 2017 Rev. 5 ESD11N5.0S/DESD11N5.0ST5G ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A V I ( A) V (V) I V (V) RWM BR T C R (V) V (Note 2) I C (pF) I = 1 A V RWM PP T C Device Max Per IEC6100042 (Note 3) (Note 4) Marking Max Max Min mA Typ Max Device ESD11N5.0ST5G N5S0 5.0 1.0 5.8 1.0 0.6 0.9 12 Figures 1 and 2 See Below 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveforms per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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