ASML-5829
Schottky Assisted Low Power PIN Diode Limiter
Data Sheet
Description Features
The ASML-5829 is specifically designed for low power Low Power Limiter with unique combination of PIN and
limiter applications, where it can be used to protect the Schottky Diode
receiver system from being damaged by large input
Low limiting threshold power (OP1dB: 6.05 dBm
signals, and allow the receiver system to function normally
@900MHz)
with the absence of large signal. The Schottky enhanced
Semi integrated solution in Surface Mount SOT-323
limiter will have a lower limiting threshold compared to
Package
the more conventional self-biased PIN limiter. The PIN
diode is placed at the input, to protect the Schottky from increase flexibility
high RF power levels.
save board space
reduce cost
PIN Diode features:
Pin Connections, Package Marking & Orientation,
Low Capacitance
SOT-323
Low Resistance at Low Current
[1]
Low Failure in Time (FIT) Rate
Schottky Diode features:
PIN Diode Schottky Diode Low Turn-On Voltage
(As Low as 0.34 V at 1 mA)
[1]
Low FIT (Failure in Time) Rate
Note:
1. For more information see the Surface Mount PIN Reliability Data
Sheet.
GB?
Notes:
GB = Device Code
? = Month code indicates the month of manufacture [1]
Table 1. Absolute Maximum Rating Tc = +25C, PIN diode
Absolute Max. Absolute Max.
Symbol Parameter Units for PIN Diode for Schottky Diode
I Forward Current (1s Pulse) Amp 1 1
F
P Peak Inverse Voltage V 100 15
IV
T Junction Temperature C 150
J
T Storage Temperature C -65 to 150
STG
[2]
Thermal Resistance C/W 150
JC
Notes:
1. Operation in excess of anyone of these conditions may result in permanent damage to the device.
2. T = 25C, T where is defined to be the temperature at the package pins where contacts is made to the circuit board.
C C
Table 2. Electrical Specifications, Tc = +25C, PIN diode
Symbol Parameter and Test Condition Units Min. Typ Max.
V Breakdown Voltage @ I 10A V 100 128
BR R
V Forward Voltage @ I = 30mA V 0.90
F F
R Typical Series Resistance @ Freq = 100MHz & I = 1mA Ohm 4.00
S F
R Typical Series Resistance @ Freq = 100MHz & I = 5mA Ohm 1.90 2.5
S F
C Typical Total Capacitance @ Freq = 1MHz & V = 5V pF 0.28 0.375
T R
Carrier Lifetime @ I =10mA & I = 6mA ns 200
F R
Table 3. Electrical Specifications, Tc = +25C, Schottky diode
Symbol Parameter and Test Condition Units Min. Typ Max.
V Breakdown Voltage @ I 100A V 15 22
BR R
I Reverse Leakage Current @ V = 1V nA 40 100
R BR
V Forward Voltage @ I = 1mA V 0.32 0.34
F F
V Forward Voltage @ I = 10mA V 0.45 0.50
F F
C Typical Total Capacitance @ Freq = 1MHz & V = 0V pF 0.7 1.0
T R
RD Typical Dynamic Resistance, I = 5mA Ohm 12
F
2