Product Information

GA01PNS150-220

GA01PNS150-220 electronic component of GeneSiC Semiconductor

Datasheet
PIN Diodes 15000V 1A Standard

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 706.86 ea
Line Total: USD 706.86

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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GA01PNS150-220
GeneSiC Semiconductor

1 : USD 638.55
10 : USD 586.3752

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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GA01PNS150-220
GeneSiC Semiconductor

1 : USD 559.13
5 : USD 559.13
10 : USD 559.13
30 : USD 537.625

     
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RoHS - XON
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GA01PNS150-220 Silicon Carbide PiN Diode V = 15.0 kV RRM I = 1 A F (Tc=25C) Features Package RoHS Compliant 15 kV blocking 175 C operating temperature Fast turn off characteristics PIN 1 Soft reverse recovery characteristics 2 Ultra-Fast high temperature switching 1 PIN 2 Advantages Applications Highest voltage rectifier commercially available Voltage Multiplier Reduced stacking Ignition/Trigger Circuits Reduced system complexity/Increased reliability Oil/Downhole Lighting Defense Maximum Ratings at T = 175 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 15 kV RRM Continuous forward current I 1 A F RMS forward current I 0.5 A F(RMS) Operating and storage temperature T , T -55 to 175 C j stg Electrical Characteristics at T = 175 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 1 A, T = 25 C F j 6.4 Diode forward voltage VF V I = 1 A, T = 175 C 4.7 F j V = 8 kV, T = 25 C 1 20 R j Reverse current I A R V = 8 kV, T = 175 C 100 R j V = 1000 V R Total reverse recovery charge Q I I 558 nC rr F F,MAX I = 1.5 A F dI /dt = 70 A/s F V = 1000 V R T = 175 C Switching time t j < 236 ns s I = 1.5 A F V = 1 V, f = 1 MHz, T = 25 C 22 R j Total capacitance C V = 400 V, f = 1 MHz, T = 25 C 4 pF R j V = 1000 V, f = 1 MHz, T = 25 C 3 R j V = 1000 V, f = 1 MHz, T = 25 C Total capacitive charge Q R j 4.5 nC C Apr 2015 Latest version at: GA01PNS150-220 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics at 25C Figure 3: Typical Junction Capacitance vs Reverse Voltage Figure 4: Typical Turn Off Characteristics at I = 0.5 A and k Characteristics V = 1000 V R Figure 5: Typical Turn Off Characteristics at T = 175C and j Figure 6: Reverse Recovery Charge vs Cathode Current V = 1000 V R Apr 2015 Latest version at:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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