HSMP-3830-BLKG Broadcom

HSMP-383x Surface Mount RF PIN Diodes Data Sheet Description/Applications Features The HSMP-383x series of general purpose PIN diodes Diodes Optimized for: are designed for two classes of applications. The first Low Capacitance Switching is attenuators where current consumption is the most LowC urrentA ttenuator important design consideration. The second application SurfaceM ountSO T-23 Package for this series of diodes is in switches where low Single and Dual Versions capacitance is the driving issue for the designer. Tape andR eelOptions A vailable 1 The HSMP-386x series Total Capacitance (C ) and Total Low Failure in Time (FIT)R ate T Resistance (R ) are typical specifications. For applications T Lead-free that require guaranteed performance, the general purpose HSMP-383xser iesis recommended. Note: 1. For more information see the Surface Mount PIN Reliability Data Sheet. A SPICE model is not available for PIN diodes as SPICE does not provide for a key PIN diode characteristic, carrier lifetime. Package Lead Code Identification (Top View) SERIES SINGLE 0 2 COMMON COMMON ANODE CATHODE 3 4 1 Absolute Maximum Ratings T = 25C C Symbol Parameter Units Absolute Maximum I ForwardC urrent (1 ms Pulse) Amp 1 f 2 P TotalD evice Dissipation mW 250 t P PeakI nverse Voltage Same as V iv BR T Junction Temperature C 150 j T Storage Temperature C -65t o150 STG Notes: 1. Operation in excessof any one ofthese conditions may resultin permanent damage to this device. 2. CWP ower Dissipation at T = 25C.D erate to zero at maximum ratedt emperature. LEAD PIN General Purpose Diodes, Electrical Specifications T = 25C C Minimum Maximum Maximum Part Package Breakdown Series Total Number Marking Lead Voltage Resistance Capacitance HSMP- Code Code Configuration V (V) R () C (pF) BR S T 3830 K0 0 Single 200 1.5 0.3 3832 K2 2 Series 3833 K3 3 Common Anode 3834 K4 4 CommonC athode T estC onditions V = V I = 100 mA V = 50 V R BR F R Measure f = 100 MHz f = 1MH z I 10 mA R Typical Parameters at T = 25C C Part Number Series Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance HSMP- R () (ns) T (ns) C (pF) S rr T 383x 20 500 80 0.20 50 V T est Conditions I = 1 mA I = 50 mA V =10 V F F R f = 100 MHz I = 250 mA I = 20mA R F 90% Recovery 2