Product Information

CE3512K2-C1

CE3512K2-C1 electronic component of CEL

Datasheet
RF JFET Transistors 12GHz NF .3dB Ga 13.7dB -55C +125C

Manufacturer: CEL
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7152 ea
Line Total: USD 1.7152

12787 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11206 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 1.461
10 : USD 1.2196
100 : USD 0.9696
500 : USD 0.8453
1000 : USD 0.7076
2500 : USD 0.6931
10000 : USD 0.6327

     
Manufacturer
Product Category
RoHS - XON
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RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG Enter a Short Document/Title Name Here DESCRIPTION PACKAGE Super Low Noise and High Gain Micro-X plastic package Hollow (Air Cavity) Plastic package FEATURES Super Low noise figure and high associated gain: NF = 0.30 dB TYP., Ga = 13.7 dB TYP. V = 2 V, I = 10 mA, f = 12 GHz DS D APPLICATIONS DBS LNB gain-stage, Mix-stage Low noise amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number Package Marking Description CE3512K2 CE3512K2-C1 Micro-X plastic C5 Embossed tape 8 mm wide package Pin 4 (Gate) faces the perforation side of the tape MOQ 10 kpcs/reel This document is subject to change without notice. Date Published: July 2016 CDS-0018-05 (Issue A) 1 CE3512K2 PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1 Source 2 Drain 3 Source 4 Gate ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified) Parameter Symbol Rating Unit Drain to Source Voltage V 4.0 V DS Gate to Source Voltage V -3.0 V GS Drain Current I I mA D DSS Gate Current I 80 A G Total Power Dissipation P 125 mW tot C Channel Temperature T +150 ch Storage Temperature T -55 to +125 C stg Note -55 to +125 C Operation Temperature T op Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4 RECOMMENDED OPERATING RANGE (TA = +25C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage V +1 +2 +3 V DS Drain Current I 5 10 15 mA D This document is subject to change without notice. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
California Eastern Laboratories
CALIFORNIA MICRO DEV

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