Product Information

CE3514M4

CE3514M4 electronic component of CEL

Datasheet
RF JFET Transistors 12GHz NF .42dB Ga 12.2dB -55C +125C

Manufacturer: CEL
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6152 ea
Line Total: USD 1.6152

320 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
224 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1
1 : USD 1.311
10 : USD 1.0913
100 : USD 0.8797
500 : USD 0.7188
1000 : USD 0.6647
2500 : USD 0.659
5000 : USD 0.6463
10000 : USD 0.6302
25000 : USD 0.6291

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Id - Continuous Drain Current
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Brand
Factory Pack Quantity :
Configuration
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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RF Low Noise FET CE3514M4 12GHz Low Noise FET in Dual Mold Plastic PKG Enter a Short Document/Title Name Here DESCRIPTION PACKAGE Low Noise and High Gain Flat-lead 4-pin thin-type super minimold Original Dual Mold Plastic package package FEATURES Low noise figure and high associated gain NF=0.42dB TYP., Ga=12.2dB TYP. VDS=2V, ID=10mA, f=12GHz APPLICATIONS DBS LNB gain-stage, Mix-stage Low noise amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number Package Marking Description CE3514M4 CE3514M4-C2 Flat-lead 4-pin C0F Embossed tape 8 mm wide thin-type super Pin 1(Source), Pin 2 (Drain) minimold Face the perforation side of package the Tape MOQ 15 kpcs/reel This document is subject to change without notice. Date Published: July 2016 CDS-0021-02 (Issue A) 1 CE3514M4 PIN CONFIGURATION : PIN No. PIN Name 1 Source 2 Drain 3 Source 4 Gate ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified) Parameter Symbol Rating Unit Drain to Source Voltage V 4.0 V DS Gate to Source Voltage V -3.0 V GS Drain Current I I mA D DSS Gate Current I 80 A G Total Power Dissipation P 125 mW tot C Channel Temperature T +150 ch Storage Temperature T -55 to +125 C stg Note C Operation Temperature T -55 to +125 op Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4 RECOMMENDED OPERATING RANGE A (T = +25C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage V +1 +2 +3 V DS Drain Current I 5 10 15 mA D This document is subject to change without notice. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
California Eastern Laboratories
CALIFORNIA MICRO DEV

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