L8104 CEL

L8104 EK0502-0018 Ver.A PIN Diode FEATURES High Power Handling Low Capacitance at Zero Bias, Extremely Small Reverse Bias Low Series Resistance Very Low Insertion Loss, High Isolation DIMENSION UNITS Hermetic Ceramic MELF Package RoHS Compliant CATHODE MARK Pb Free MIN. 1.9 MAX. 2.2 MIN. 0.1 DESCRIPTIONS MAX. 0.8 MIN. 1.9 The L8104 PIN diode is designed for high power antenna MIN. 2.5 MAX. 2.2 MAX. 3.5 switches in two-way radios. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER RATING UNITS VR Reverse Voltage 180 V PD * Power Dissipation 3 W Tj Junction Temperature 175 Tstg Storage Temperature Range -55 to175 *) 25 contacts ELECTRICAL CHARACTERISTICS (Ta=25) LIMITS SYMBOL PARAMETER CONDITIONS UNITS MIN TYP MAX IR Reverse Current VR=180V - - 10 A VF Forward Voltage IF=50mA - - 1.0 V Diode Capacitance CT VR = 40V, f = 100MHz - - 1.2 pF Forward Series Resistance Rfs IF = 50mA, f = 100MHz - 0.5 0.75 Parallel Resistance RP VR = 0V, f = 100MHz 1.0 3.0 - k Litec Corporation 1L8104 EK0502-0018 Ver.A PIN Diode TYPICAL PERFORMANCE CHARACTERISTICS Forward Current Reverse Current vs. Forward Voltage Ta=25 vs. Reverse Voltage Ta=25 100 1000 10 100 1 10 0.1 1 0.0 0.5 1.0 1.5 1 10 100 1000 VF (V) VR (V) Forward Series resistance Diode Capacitance vs. Forward Current vs. Reverse Voltage Ta=25 Ta=25 10 10 f=100MHz 1 f=470MHz 1 0.1 f=100MHz 0.01 0.1 0.1 1 10 100 1 10 100 VR+0.65 (V) IF (mA) Litec Corporation 2 IF (mA) Rfs () IR (nA) Ct (pF)