TE NE681M03 NEC s NPN SILICON TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 NEW M03 PACKAGE: 1.20.05 Smallest transistor outline package available Low profile/0.59 mm package height 0.80.1 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: 2 fT = 7 GHz 1.4 0.1 0.45 LOW NOISE FIGURE: (0.9) 0.30.1 NF = 1.4 dB 0.45 3 1 0.20.1 DESCRIPTION NEC s NE681M03 transistor is ideal for low noise, high gain, 0.590.05 and low cost amplifier applications. NEC s new low profile/ +0.1 0.15 flat lead styleM03 package is ideal for today s portable -0.05 wireless applications. The NE681 is also available in chip, PIN CONNECTIONS Micro-x, and six different low cost plastic surface mount 1. Emitter package styles. 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE681M03 1 EIAJ REGISTERED NUMBER 2SC5433 PACKAGE OUTLINE M03 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 4.5 7.0 NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 1.4 2.7 2 S21E Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 10 12 2 hFE Forward Current Gain at VCE = 3 V, IC = 7 mA 80 145 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 A 0.8 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 A 0.8 3 CRE Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.9 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories DISCONTINUEDNE681M03 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) ORDERING INFORMATION SYMBOLS PARAMETERS UNITS RATINGS PART NUMBER QUANTITY VCBO Collector to Base Voltage V 20 NE681M03-A VCEO Collector to Emitter Voltage V 10 NE681M03-T1-A VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 65 PT Total Power Dissipation mW 125 TJ Junction Temperature C 150 TSTG Storage Temperature C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT vs. FORWARD CURRENT GAIN vs. COLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE 65 500 VCE = 8 V 300 55 200 45 100 35 70 50 25 30 15 20 5 10 24 6 8 10 0 1 2 3 5 7 10 20 30 50 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) DISCONTINUED Collector Current, IC (mA) DC Forward Current Gain, hFE