SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: 2 S21E = 12 dB 2 V, 7 mA, 2 GHz 18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER 2 S21E = 11 dB 1 V, 5 mA, 2 GHz MINI MOLD) LOW NOISE: 1.5 dB AT 2.0 GHz AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES DESCRIPTION The NE686 series of NPN epitaxial silicon transistors are 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) designed for low voltage/low current, amplifier and oscillator applications. NE686 s high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available in six different low cost plastic surface mount pack- age styles. 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) ELECTRICAL CHARACTERISTICS (TA = 25C) 1 PART NUMBER NE68618 NE68619 NE68630 NE68633 NE68639/39R 2 EIAJ REGISTERED NUMBER 2SC5180 2SC5181 2SC5179 2SC5177 2SC5178/78R PACKAGE OUTLINE 18 19 30 33 39/39R SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 2 V, IC = 7 mA, f = 2.0 GHz GHz 12 15.5 10 13 7.5 9 10 13 10.5 13.5 fT Gain Bandwidth Product at VCE = 1 V, IC = 5 mA, f = 2.0 GHz GHz 10 13 8.5 12 7 8.5 8.5 12 8.5 12 NFMIN Minimum Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.0 GHz dB 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 NFMIN Minimum Noise Figure at VCE = 1 V, IC = 3 mA, f = 2.0 GHz dB 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 2 S21e Insertion Power Gain at VCE = 2V, IC =7 mA, f = 2.0 GHz dB 10 12 8 10.5 7.5 9 7.5 9 9.5 11.5 2 S21e Insertion Power Gain at VCE = 1V, IC =5 mA, f = 2.0 GHz dB 8.5 11 7 9 7 8.5 7 8.5 7.5 10.5 3 hFE Forward Current Gain at VCE = 2 V, IC = 7 mA 70 140 70 140 70 140 70 140 70 140 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA nA 100 100 100 100 100 4 CRE Feedback Capacitance at VCB = 2 V, IE = 0 mA, f = 1 MHz pF 0.3 0.5 0.4 0.6 0.4 0.6 0.5 0.6 0.3 0.5 PT Total Power Dissipation mW 30 30 30 30 30 RTH(J-A) Thermal Resistance (Junction to Ambient) C/W 833 1250 833 625 625 RTH(J-C) Thermal Resistance(Junction to Case) C/W Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 2. Electronic Industrial Association of Japan. 3. Pulsed measurement, PW 350 s, duty cycle 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. PLEASE NOTE: The following part numbers from this datasheet are not recommended for new design. Please call sales office for details: NE68630 NE68633 NE68639 NE68639RNE686 SERIES 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) NE68619 SYMBOLS PARAMETERS UNITS RATINGS TYPICAL NOISE PARAMETERS (TA = 25C) VCBO Collector to Base Voltage V 5 FREQ. NFOPT GA OPT (MHz) (dB) (dB) MAG ANG Rn/50 VCEO Collector to Emitter Voltage V 3 VEBO Emitter to Base Voltage V 2 VCE = 0.5 V, IC = 0.5 mA IC Collector Current mA 10 500 0.96 15.00 0.76 16 1.20 800 1.03 12.50 0.76 30 1.13 TJ Operating 1000 1.10 11.94 0.72 40 1.09 Junction Temperature C 150 1500 1.42 6.69 0.67 48 1.10 TSTG Storage Temperature C -65 to +150 VCE = 1.0 V, IC = 1.0 mA Notes: 500 0.91 17.59 0.73 14 1.09 1. Operation in excess of any one of these parameters may result in 800 1.00 15.38 0.69 28 0.82 permanent damage. 1000 1.08 14.50 0.66 38 0.80 1500 1.35 9.78 0.63 46 0.78 NE68618 2000 1.60 7.41 0.59 56 0.75 2500 1.80 6.15 0.53 70 0.68 TYPICAL NOISE PARAMETERS (TA = 25C) VCE = 1.0 V, IC = 3.0 mA FREQ. NFOPT GA OPT 500 1.35 20.29 0.63 15 0.59 (MHz) (dB) (dB) MAG ANG Rn/50 800 1.38 16.88 0.60 28 0.55 VCE = 1.0 V, IC = 1.0 mA 1000 1.43 15.44 0.56 37 0.52 1500 1.55 11.50 0.53 43 0.51 500 1.03 18.47 0.76 14 0.96 2000 1.67 9.28 0.48 51 0.50 800 1.10 17.10 0.69 29 0.83 2500 1.78 7.70 0.44 62 0.47 1000 1.15 14.81 0.66 34 0.78 3000 1.83 6.52 0.30 71 0.38 1500 1.30 10.20 0.63 40 0.67 2000 1.52 7.97 0.58 50 0.58 VCE = 1.0 V, IC = 5.0 mA 2500 1.74 6.65 0.51 61 0.53 500 1.68 21.17 0.50 14 0.55 VCE = 1.0 V, IC = 3.0 mA 800 1.70 17.59 0.48 28 0.53 1000 1.74 15.74 0.46 33 0.52 500 1.30 21.08 0.61 13 0.56 1500 1.83 12.25 0.42 41 0.51 800 1.33 17.51 0.58 23 0.53 2000 1.91 10.00 0.38 53 0.49 1000 1.36 15.75 0.55 28 0.52 2500 2.00 8.49 0.33 65 0.39 1500 1.50 12.35 0.50 37 0.50 3000 2.09 7.30 0.28 77 0.35 2000 1.67 10.03 0.46 45 0.48 2500 1.83 8.47 0.41 54 0.44 VCE = 2.0 V, IC = 3.0 mA 3000 1.98 7.30 0.36 64 0.33 500 1.35 21.12 0.63 15 0.68 VCE = 2.0 V, IC = 3.0 mA 800 1.38 17.80 0.60 28 0.62 1000 1.43 16.34 0.56 37 0.60 500 1.30 21.96 0.61 13 0.66 1500 1.55 12.36 0.53 43 0.58 800 1.33 18.38 0.58 23 0.58 2000 1.67 10.00 0.48 51 0.56 1000 1.36 16.61 0.55 28 0.57 2500 1.78 8.48 0.44 62 0.50 1500 1.50 13.20 0.50 37 0.55 3000 1.83 7.24 0.40 71 0.36 2000 1.67 10.81 0.46 45 0.50 2500 1.83 9.22 0.41 54 0.47 3000 1.98 8.00 0.36 64 0.38 VCE = 2.0 V, IC = 10.0 mA 500 2.15 23.2 0.39 14 0.58 800 2.17 19.21 0.36 20 0.56 1000 2.20 17.52 0.32 27 0.55 1500 2.28 14.18 0.27 36 0.51 2000 2.42 11.81 0.24 45 0.48 2500 2.55 10.09 0.21 51 0.43 3000 2.70 8.78 0.17 61 0.29