NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP. VCE = 2 V, IC = 7 mA, f = 1 GHz Maximum stable power gain: MSG = 17.0 dB TYP. VCE = 3 V, IC = 50 mA, f = 2 GHz High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V 6-pin lead-less minimold (M16, 1208 PKG) <R> ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NESG2101M16 NESG2101M16-A 6-pin lead-less minimold 50 pcs 8 mm wide embossed taping (M16, 1208 PKG) (Non reel) Pin 1 (Collector), Pin 6 (Emitter) face the (Pb-Free) perforation side of the tape NESG2101M16-T3 NESG2101M16-T3-A 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 190 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10395EJ03V0DS (3rd edition) Date Published September 2009 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. NESG2101M16 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA 100 nA Note 1 DC Current Gain hFE VCE = 2 V, IC = 15 mA 130 190 260 RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 50 mA, f = 2 GHz 14 17 GHz 2 Insertion Power Gain S21e VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 dB VCE = 2 V, IC = 10 mA, f = 2 GHz, Noise Figure (1) NF 0.9 1.2 dB ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 7 mA, f = 1 GHz, Noise Figure (2) NF 0.6 dB ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 10 mA, f = 2 GHz, Associated Gain (1) Ga 11.0 13.0 dB ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 7 mA, f = 1 GHz, Associated Gain (2) Ga 19.0 dB ZS = ZSopt, ZL = ZLopt Note 2 Reverse Transfer Capacitance Cre VCB = 2 V, IE = 0 mA, f = 1 MHz 0.4 0.5 pF Note Maximum Stable Power Gain MSG VCE = 3 V, IC = 50 mA, f = 2 GHz 14.5 17.0 dB 3 Gain 1 dB Compression Output Power PO (1 dB) VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f 21 dBm = 2 GHz, ZS = ZSopt, ZL = ZLopt Linear Gain GL VCE = 3.6 V, IC = 10 mA, f = 2 GHz, 15 dBm ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded S21 3. MSG = S12 hFE CLASSIFICATION <R> Rank FB/YFB Marking zH hFE Value 130 to 260 2 Data Sheet PU10395EJ03V0DS