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MPS8099

MPS8099 electronic component of Central Semiconductor
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See Product Specifications
Part No. MPS8099
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT 80Vcbo NPN Trans 80Vceo 500mA 625mW
Datasheet: MPS8099 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8085 ea
Line Total: USD 0.81

8160 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3916 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5405
10 : USD 0.4577
100 : USD 0.3416
500 : USD 0.2691
1000 : USD 0.2139
2500 : USD 0.1806
10000 : USD 0.1782
25000 : USD 0.1713
50000 : USD 0.1702

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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MPS8098 MPS8099 www.centralsemi.com DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR MPS8098 and MPS8099 types are NPN silicon transistors designed for general purpose audio amplifier applications. PNP complementary types are MPS8598 and MPS8599. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL MPS8098 MPS8099 UNITS A Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C) MPS8098 MPS8099 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =Rated V - 0.1 - 0.1 A CBO CB CBO I V=60V - 0.1 - 0.1 A CEO CE I V=6.0V - 0.1 - 0.1 A EBO EB BV I=100A 60 - 80 - V CBO C BV I=10mA 60 - 80 - V CEO C BV I=10A 6.0 - 6.0 - V EBO E V I =100mA, I=5.0mA - 0.4 - 0.4 V CE(SAT) C B V I =100mA, I=10mA - 0.3 - 0.3 V CE(SAT) C B V V =5.0V, I=1.0mA 0.5 0.7 - - V BE(ON) CE C V V =5.0V, I=10mA - - 0.6 0.8 V BE(ON) CE C h V =5.0V, I=1.0mA 100 300 100 300 FE CE C h V =5.0V, I=10mA 100 - 100 - FE CE C h V =5.0V, I=100mA 75 - 75 - FE CE C f V =5.0V, I =10mA, f=100MHz 150 - 150 - MHz T CE C C V =5.0V, I =0, f=1.0MHz - 6.0 - 6.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 25 - 25 pF ib EB C R2 (27-August 2012)MPS8098 MPS8099 NPN SILICON TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (27-August 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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