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MPSA55

MPSA55 electronic component of Central Semiconductor
Images are for reference only
See Product Specifications
Part No. MPSA55
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT PNP Med Power
Datasheet: MPSA55 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.627 ea
Line Total: USD 0.63

22027 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14264 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4083
10 : USD 0.3105
100 : USD 0.1966
1000 : USD 0.1345
2500 : USD 0.1162
10000 : USD 0.1127
25000 : USD 0.1081
50000 : USD 0.1069
100000 : USD 0.1035

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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MPSA05 MPSA06 NPN MPSA55 MPSA56 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR MPSA05, MPSA55 series devices are complementary silicon transistors designed for low power output and medium power driver applications. MARKING: FULL PART NUMBER TO-92 CASE MPSA05 MPSA06 MAXIMUM RATINGS: (T =25C) SYMBOL MPSA55 MPSA56 UNITS A Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 4.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 100 nA CBO CB CBO I V=60V 100 nA CES CE BV I =1.0mA (MPSA05, 55) 60 V CEO C BV I =1.0mA (MPSA06, 56) 80 V CEO C BV I=100A 4.0 V EBO E V I =100mA, I=10mA 0.25 V CE(SAT) C B V V =1.0V, I=100mA 1.2 V BE(ON) CE C h V =1.0V, I=10mA 100 FE CE C h V =1.0V, I=100mA 100 FE CE C f V =2.0V, I =10mA, f=100MHz (NPN) 100 MHz T CE C f V =1.0V, I =100mA, f=100MHz (PNP) 50 MHz T CE C R7 (26-March 2015)MPSA05 MPSA06 NPN MPSA55 MPSA56 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER TYPICAL ELECTRICAL CHARACTERISTICS R7 (26-March 2015) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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