X-On Electronics has gained recognition as a prominent supplier of 2SD2391 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2391 Bipolar Transistors - BJT are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2391 Changjing Electronics Technology

2SD2391 electronic component of Changjing Electronics Technology
2SD2391 Changjing Electronics Technology
2SD2391 Bipolar Transistors - BJT
2SD2391  Semiconductors

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See Product Specifications
Part No. 2SD2391
Manufacturer: Changjing Electronics Technology
Category: Bipolar Transistors - BJT
Description: Transistors (NPN/PNP) NPN 2A 60V SOT-89 (SOT-89-3) RoHS
Datasheet: 2SD2391 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.13 ea
Line Total: USD 0.65 
Availability - 15224
Ship by Mon. 23 Jun to Thu. 26 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
15224
Ship by Mon. 23 Jun to Thu. 26 Jun
MOQ : 5
Multiples : 5
5 : USD 0.13
50 : USD 0.1026
150 : USD 0.089
1000 : USD 0.053
2000 : USD 0.0475
5000 : USD 0.0448

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
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We are delighted to provide the 2SD2391 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2391 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR (NPN) SOT-89-3L FEATURES Low V CE(sat) 1.BASE 1 2 3 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current -Continuous 2 A C P Collector Power Dissipation 0.5 W C T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =50A,I=0 60 V (BR)CBO C E V I =1mA,I=0 60 V Collector-emitter breakdown voltage (BR)CEO C B V I =50A,I=0 6 V Emitter-base breakdown voltage (BR)EBO E C I V =50V,I=0 0.1 A Collector cut-off current CBO CB E Emitter cut-off current I V =5V,I=0 0.1 A EBO EB C h V =2V,I=0.5A 120 270 FE(1) CE C DC current gain h V =2V,I=1.5A 45 FE(2) CE C Collector-emitter saturation voltage V I =1A,I=50mA 0.35 V CE(sat) C B Transition frequency f V =2V,I =0.5A, f=100MHz 210 MHz T CE C Output capacitance Cob V =10V,I=0, f=1MHz 21 pF CB E www.cj-elec.com 1 D,Sep,2017Typical Characteristics h I Static Characteristic FE C 1.5 400 V = 2V CE COMMON EMITTER 5mA T =25 o a T =100 C a 4.5mA 300 4mA 1.0 3.5mA 200 3.mA 2.5mA o T =25 C a 0.5 2mA 100 1.5mA 1mA I =0.5mA B 0.0 0 2000 012 3456 1 10 100 1000 COLLECTOR CURRENT I (mA) C COLLECTOR-EMITTER VOLTAGE V (V) CE V I V I CEsat C BEsat C 1000 400 =20 800 300 T =25 a 600 200 T =100 T =100 a a 400 100 T =25 a =20 200 0 0.1 1 10 100 1000 2000 0.1 1 10 100 1000 2000 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 1000 2000 f=1MHz 1000 V =2V CE I =0 / I =0 E C 50 o T =25 C a 100 C o ib T =100 C a 100 10 C ob T =25 a 1 0.1 10 200 400 600 800 1000 1200 0.1 1 10 20 REVERSE VOLTAGE V (V) BASE-EMITTER VOLTAGE V (mV) BE P T c a 600 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a www.cj-elec.com 2 D,Sep,2017 COLLECTOR CURRENT I (mA) COLLECTOR POWER DISSIPATION C BASE-EMITTER SATURATION COLLECTOR CURRENT I (A) C P (mW) c VOLTAGE V (mV) BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V (mV) DC CURRENT GAIN h CEsat FE CAPACITANCE C (pF)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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