BAV16WS Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage V 100 V RM Peak Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 100 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 71 V R(RMS) I 300 mA Forward Continuous Current FM Average Rectified Output Current I 150 mA O Peak Forward Surge Current t=1.0s 2.0 I A FSM 1.0 t=1.0s Power Dissipation Pd 200 mW Thermal Resistance Junction to Ambient R 625 /W JA Junction Temperature T 150 j Storage Temperature T -55~+150 STG Electrical Ratings Ta=25 Parameter Symbol Min Typ Max Unit Conditions V 0.715 V I =1mA F1 F V 0.855 V I =10mA F2 F Forward voltage V 1.0 V I =50mA F3 F V 1.25 V I =150mA F4 F I 1 A V =75V R1 R Reverse current I 25 nA V =20V R2 R Capacitance between terminals C 2 pF V =0V,f=1MHz T R I =I =10mA F R Reverse recovery time t 4 ns rr Irr=0.1XI ,R =100 R L A,May,2011Typical Characteristics BAV16WS/1N4148WS Forward Characteristics Reverse Characteristics 200 1000 100 T =100 a 10 100 1 T =25 a 10 0.1 0.01 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 020 40 60 80 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Power Derating Curve Capacitance Characteristics 1.2 300 T =25 a f=1MHz 250 200 1.0 150 100 50 0.8 0 0 5 10 15 20 0 25 50 75 100 125 150 REVERSE VOLT AGE V (V) AMBIENT TEMPERATURE T ( ) R a A,May,2011 T =100 a T =25 a FORWARD CURRENT I (mA) CAPACITANCE BETWEEN TERMINALS F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (nA) D R