Product Information

RHRG5060

RHRG5060 electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 50A 600V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 450
Multiples : 1

Stock Image

RHRG5060
ON Semiconductor

450 : USD 2.9662
500 : USD 2.4948
900 : USD 2.3003
1000 : USD 2.2563
N/A

Obsolete
0 - WHS 2

MOQ : 17
Multiples : 17

Stock Image

RHRG5060
ON Semiconductor

17 : USD 1.5288
40 : USD 1.4676
125 : USD 1.4676
400 : USD 1.4676
1250 : USD 1.4676
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

RHRG5060
ON Semiconductor

1 : USD 6.8671
10 : USD 5.9879
30 : USD 5.4647
90 : USD 4.9356
450 : USD 4.6914
900 : USD 4.5815
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

RHRG5060
ON Semiconductor

1 : USD 5.5296
10 : USD 4.6041
100 : USD 3.7659
450 : USD 3.2438
900 : USD 2.9714
2700 : USD 2.8229
5400 : USD 2.7238
10350 : USD 2.6743
25200 : USD 2.6495
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

Stock Image

RHRG5060
ON Semiconductor

1 : USD 4.83
3 : USD 4.354
6 : USD 3.164
14 : USD 2.996
N/A

Obsolete
0 - WHS 6

MOQ : 3
Multiples : 1

Stock Image

RHRG5060
ON Semiconductor

3 : USD 3.1526
10 : USD 2.9506
25 : USD 2.7405
50 : USD 2.5293
100 : USD 2.4786
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Hyperfast Diode 50 A, 600 V RHRG5060 Description The RHRG5060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes www.onsemi.com andissilicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. CATHODE Features ANODE Hyperfast Recovery ( t = 50 ns ( I = 50 A ) rr F JEDEC STYLE Max Forward Voltage( V = 2.1 V ( T = 25 C ) TO247 F C 340CL 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is PbFree and is RoHS Compliant MARKING DIAGRAM Applications Switching Power Supplies Power Switching Circuits Y&Z&3&K RHRG5060 General Purpose ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Y = ON Semiconductor Logo &Z = Assembly Plant Code Average Rectified Forward Current I 50 A F(AV) &3 = Numeric Date Code (T = 93 C) C &K = Lot Code Repetitive Peak Surge Current I 100 A FRM RHRG5060 = Specific Device Code (Square Wave, 20 kHz) Nonrepetitive Peak Surge Current I 500 A FSM (Halfwave 1 Phase, 60 Hz) Maximum Power Dissipation P 150 W D Avalanche Energy E 40 mJ AVL 1. Cathode 2. Anode (See Figure 10 and Figure 11) Operating and Storage Temperature T T 65 to C STG, J +175 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 2 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: July, 2021 Rev. 4 RHRG5060/DRHRG5060 PACKAGE MARKING AND ORDERING INFORMATION Part Number Package Brand RHRG5060 TO2472L RHRG5060 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V Instantaneous Forward Voltage I = 50 A 2.1 V F F (Pulse Width = 300 s, Duty Cycle = 2%) I = 50 A, 1.7 V F T = 150C C I Instantaneous Reverse Current V = 600 V 250 A R R V = 600 V 1.5 mA R T = 150C C t Reverse Recovery Time (See Figure 9 ) I = 1 A, 45 ns rr F Summation of t + t dl /dt = 100 A/ s a b F I = 50 A, 50 ns F dI /dt = 100 A/ s F t Time to Reach Peak Reverse Current (See Figure 9) I = 50 A, 25 ns a F dI /dt = 100 A/ s F t Time from Peak I to Projected Zero Crossing of I I = 50 A, 20 ns b RM RM F Based on a Straight Line from Peak I Through 25% dI /dt = 100 A/ s RM F of I (See Figure 9) RM Q Reverse Recovery Charge I = 50 A, 65 nC rr F dI /dt = 100 A/ s F C Junction Capacitance V = 10 V, 140 pF J R I = 0 A F Thermal Resistance Junction to Case 1.0 C/W R JC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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