DAN217U Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 DAN217U SWITCHING DIODE FEATURES z Small surface mounting type z Two diode elements are connected in series 1 3 2 MARKING:A7 Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Parameter Symbol Limit Unit Peak reverse voltage V 80 RM V DC reverse voltage V 80 R V Maximum (peak) forward current I 300 FM mA Average forward current I 100 mA O Surge current (1s) 400 I FSM mA (10ms) 1000 200 Power dissipation P mW D Junction temperature T 150 j Storage temperature T -55~+150 stg Operating temperature range T -40~+100 opr ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V I = 100A 80 V (BR) R Reverse voltage leakage current I V=70V 0.2 A R R Forward voltage V mV F I=100mA 1200 F A,May,2011Typical Characteristics DAN217U Forward Characteristics Reverse Characteristics 100 1000 300 30 Ta=100 10 100 3 30 Ta=25 1 10 3 0.3 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 020 40 60 80 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Capacitance Characteristics Power Derating Curve 1.4 300 Ta=25 f=1MHz 250 1.3 200 1.2 150 100 1.1 50 1.0 0 0 5 10 15 20 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta () REVERSE VOLTAGE V (V) R A,May,2011 Ta=100 Ta=25 FORWARD CURRENT I (mA) CAPACITANCE BETWEEN TERMINALS F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (nA) D R