FMMT591 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC ( T SOT-23 FMMT591 TRANSISTOR (PNP) FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -5 V EBO A I Collector Current -1 C I Peak Pulse Current -2 A CM P Collector Power Dissipation 250 mW C R Thermal Resistance From Junction To Ambient 500 /W JA T Junction Temperature 150 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V V (BR)CBO I =-100A, I =0 -80 C E 1 V Collector-emitter breakdown voltage V I =-10mA, I =0 -60 (BR)CEO C B Emitter-base breakdown voltage V I =-100A, I =0 -5 V (BR)EBO E C Collector cut-off current I A CBO V =-60V, I =0 -0.1 CB E Emitter cut-off current I V =-4V, I =0 -0.1 A EBO EB C h FE(1) V =-5V, I =-1mA 100 CE C 1 h FE(2) V =-5V, I =-500mA 100 300 CE C DC current gain 1 h V =-5V, I =-1A 80 FE(3) CE C 1 h FE(4) V =-5V, I =-2A 15 CE C 1 V V CE(sat)1 I =-500mA, I =-50mA -0.3 C B Collector-emitter saturation voltage 1 V I =-1A, I =-100mA -0.6 V CE(sat)2 C B 1 Base-emitter saturation voltage V -1.2 V BE(sat) I =-1A, I =-100mA C B 1 Base-emitter voltage V V BE V =-5V, I =-1A -1 CE C Transition frequency f V =-10V,I =-50mA,,f=100MHz 150 MHz T CE C Collector output capacitance C 10 pF ob V =-10V,f=1MHz CB 1 Measured under pulsed conditions, Pulse width=300s, Duty cycle2%. www.cj-elec.comwww.cj-elec.com 1 D,Oct,2014A,Jun,2014Typical Characteristics Static Characteristic h I FE C -400 -1000 -2mA -350 -1.8mA o Ta=100 C -1.6mA -300 -1.4mA -1.2mA -250 o Ta=25 C -1.0mA -200 -100 -800uA -600uA -150 -400uA -100 -50 I =-200uA B V =-5V CE -0 -10 -0 -2 -4 -6 -8 -10 -12 -1 -10 -100 -1000 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I I V CEsat C C BEsat -1000 -2000 -1000 Ta=25 -100 Ta=100 Ta=100 Ta=25 -10 =10 =10 -1 -100 -0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C C / C V / V V I ob ib CB EB BE C -1000 1000 f=1MHz I =0/ I =0 E C o -800 Ta=25 C Ta=25 -600 100 -400 Ta=100 C ib -200 C ob VCE=-5V -0 10 -0.1 -1 -10 -100 -1000 0 2 4 6 8 1012 1416 1820 REVERSE VOLTAGE V (V) COLLCETOR CURRENT I (mA) C fT I Pc Ta C 500 300 250 200 100 150 100 50 VCE=-10V o Ta=25 C 10 0 -3 -10 -60 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) C AMBIENT TEMPERATURE Ta () www.cj-elec.comwww.cj-elec.com 2 A,Jun,2014D,Oct,2014 COLLECTOR-EMITTER SATURATION BASE-EMMITER VOLTAGE V (mV) COLLECTOR CURRENT I (mA) BE C VOLTAGE V (mV) TRANSITION FREQUENCY fT (MHz) CEsat BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) DC CURRENT GAIN h BEsat Pc (mW) CAPACITANCE C (pF) FE