MMBTA05 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES 1. BASE Driver transistor 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current -Continuous 0.5 A C P Collector Power Dissipation 300 mW C T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I = 100A, I =0 60 V (BR)CBO C E Collector-emitter breakdown voltage V I = 1mA, I=0 60 V (BR)CEO C B Emitter-base breakdown voltage V I =100A, I =0 4 V (BR)EBO E C Collector cut-off current I V =60V, I=0 0.1 CBO CB E A Collector cut-off current I V =60V, I=0 0.1 A CEO CE B Collector cut-off current I V =3V, I=0 0.1 EBO EB C A h V =1V, I = 10mA 100 400 FE1 CE C DC current gain h V =1V, I= 100mA 100 FE2 CE C Collector-emitter saturation voltage V (sat) I =100mA, I=10mA 0.25 V CE C B Base-emitter voltage V V =1V, I = 100mA 1.2 V BE CE C V = 2V, I =10mA CE C Transition frequency f 100 MHz T f=100MHz B,Feb,2013Typical Characteristics MMBTA05 Static Characteristic h I FE C 35 1000 COMMON EMITTER 30 T =25 a 200uA 180uA T =100 25 a 160uA 20 140uA 100 120uA T =25 a 15 100uA 80uA 10 60uA 40uA 5 COMMON EMITTER V = 1V CE I =20uA B 0 10 500 012 34 0.1 1 10 100 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V V I I BEsat CEsat C C 1000 1000 =10 =10 800 T =25 a 600 100 T =100 a 400 T =100 a T =25 a 200 10 0 0.1 1 10 100 500 0.1 1 10 100 500 COLLECTOR CURREMT I (mA) COLLECTOR CURREMT I (mA) C C I V C BE f I T C 500 500 COMMON EMITTER V =1V CE 100 100 10 1 COMMON EMITTER V =2V CE T =25 a 0.1 10 0 200 400 600 800 1000 2 10 20 30 40 50 60 70 COLLECTOR CURRENT I (mA) BASE-EMMITER VOLTAGE V (mV) C BE P T C /C V /V C a ob ib CB EB 400 1000 f=1MHz I =0/I =0 E C T =25 a 300 C ib 100 200 10 C ob 100 0 1 0 25 50 75 100 125 150 0.1 1 10 30 AMBIENT TEMPERATURE T ( ) REVERSE VOLTAGE V (V) a B,Feb,2013 T =100 a T =25 a BASE-EMITTER SATURATION VOLTAGE V (mV) COLLECTOR CURRENT I (mA) BEsat C COLLECTOR CURRENT I (mA) CAPACITANCE C (pF) C COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION TRANSITION FREQUENCY f (MHz) VOLTAGE V (mV) DC CURRENT GAIN h T P (mW) FE CEsat C