FMMT619-G Comchip

General Purpose Transistor FMMT619-G (NPN) RoHS Device Features SOT-23 -Low Saturation Voltage. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Diagram: 1 2 Collector 0.079(2.00) 3 0.071(1.80) 0.006(0.15) 0.003(0.08) 1 0.041(1.05) Base 0.100(2.55) 0.035(0.90) 0.089(2.25) 2 Emitter 0.004(0.10) max 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in inches and (millimeter) Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Units Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5.0 V Collector current-continuous IC 2 A Power dissipation PC 350 mW Thermal resistance from junction to ambient R JA 357 C/W Maximum power dissipation (Note 1) PCM 625 mW Thermal resistance from junction to ambient (Note 1) R JA 200 C/W Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Notes: 1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15*15*0.6mm. Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BTR55 Page 1 Comchip Technology CO., LTD.General Purpose Transistor Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ. Max. Units Parameter Conditions Min. - - Collector-Base breakdown voltage V(BR)CBO IC=100 A, IE=0 50 V Collector-Emitter breakdown voltage (Note 1) - - V(BR)CEO IC=10mA, IB=0 50 V - - Emitter-Base breakdown voltage V(BR)EBO IE=100 A, IC=0 5 V - Collector cut-off current ICBO VCB=40V, IE=0 100 nA - - VEB=4V, IC=0 Emitter cut-off current IEBO 100 nA - - hFE(1) VCE=2V, IC=10mA 200 - - hFE(2) VCE=2V, IC=0.2A 300 - - DC current gain (Note 1) hFE(3) VCE=2V, IC=1A 200 - - hFE(4) VCE=2V, IC=2A 100 - - hFE(5) VCE=2V, IC=6A 40 - - VCE(sat)1 IC=0.1A, IB=10mA 20 mV Collector-Emitter saturation voltage - - VCE(sat)2 IC=1A, IB=10mA 200 mV (Note 1) - - VCE(sat)3 IC=2A, IB=100mA 220 mV - - Base-Emitter saturation voltage (Note 1) VBE(sat) IC=2A, IB=50mA 1 V - - Base-Emitter on voltage (Note 1) VBE(on) IC=2A, VCE=2V 1 V - - Output capacitance VCB=10V, f=1MHz pF Cob 20 - - Turn-on time t(on) 170 nS VCC=10V, IC=1A IB1=-IB2=10mA - - t(off) Turn-off time 750 nS VCE=10V, IC=50mA - - Transition frequency fT 100 MHz f=100MHz Notes: 1. Pulse test: Pulse Width 300s, Duty Cycle 2.0%. Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BTR55 Page 2 Comchip Technology CO., LTD.