GPU450HF120D2SE Daxin Semiconductor

GPU450HF120D2SE electronic component of Daxin Semiconductor
GPU450HF120D2SE Daxin Semiconductor
GPU450HF120D2SE IGBT Transistors
GPU450HF120D2SE  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GPU450HF120D2SE IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. GPU450HF120D2SE IGBT Transistors are a product manufactured by Daxin Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. GPU450HF120D2SE
Manufacturer: Daxin Semiconductor
Category: IGBT Transistors
Description: IGBTs 62mm RoHS
Datasheet: GPU450HF120D2SE Datasheet (PDF)
Price (USD)
1: USD 115.8884 ea
Line Total: USD 115.89 
Availability : 0
  
QtyUnit Price
1$ 115.8884
30$ 112.8624

Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 115.8884
30$ 112.8624

   
Manufacturer
Product Category
Category
Rohs
Package
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We are delighted to provide the GPU450HF120D2SE from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GPU450HF120D2SE and other electronic components in the IGBT Transistors category and beyond.

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The GPU450HF120D2SE is a semiconductor device manufactured by Daxin that contains a number of insulated gate bipolar transistors (IGBTs). This device has a 62mm RoHS footprint and is specifically designed for use in power electronics applications. It is rated for a voltage of up to 1,200 volts and can handle currents from 5 to 450 amps. It has a diode protection short circuit time of 6 microseconds and an on-state resistance of 0.022 ohm. The device is designed for use in a wide variety of applications, from motor control to solar inverters. It is capable of delivering high power output and is energy efficient.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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