Product Information

STGFW20H65FB

STGFW20H65FB electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

900: USD 1.2786 ea
Line Total: USD 1150.74

0 - Global Stock
MOQ: 900  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 900
Multiples : 1

Stock Image

STGFW20H65FB
STMicroelectronics

900 : USD 1.2786
1000 : USD 1.1149

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STGFW20H65FB
STMicroelectronics

1 : USD 6.861
10 : USD 2.4647
25 : USD 2.3301
100 : USD 1.9884
600 : USD 1.6259

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Datasheet Trench gate field-stop 650 V, 20 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J 111 High speed switching series 3 2 1 TO-3PF Minimized tail current TAB V = 1.55 V (typ.) I = 20 A CE(sat) C Tight parameters distribution 3 Safe paralleling 2 3 1 2 1 Low thermal resistance TO-247 TO-3P C(2, TAB) Applications Photovoltaic inverters Power factor correction G(1) Welding High-frequency converters Description E(3) G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW20H65FB STGW20H65FB STGWT20H65FB DS10546 - Rev 3 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247, TO-3P TO-3PF V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 40 A C I C Continuous collector current at T = 100 C 20 A C (1) I Pulsed collector current 80 A CP V Gate-emitter voltage 20 V GE Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s, T = 25 C) C P Total power dissipation at T = 25 C 168 86.7 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247, TO-3P TO-3PF R Thermal resistance, junction-to-case 0.9 1.73 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS10546 - Rev 3 page 2/19

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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