Product Information

1N5822

1N5822 electronic component of DC Components

Datasheet
Diode: Schottky rectifying; THT; 40V; 3A; DO27; Package: Ammo Pack

Manufacturer: DC Components
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8505 ea
Line Total: USD 0.85

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

1N5822
DC Components

1 : USD 0.8775
10 : USD 0.585
25 : USD 0.4095
100 : USD 0.2925
196 : USD 0.0832

     
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Semiconductor Structure
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Load Current
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1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS I 3A F(AV) V 40 V RRM T 150C j V (max) 0.475 V F FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Value Symbol Parameter Unit 1N5820 1N5821 1N5822 20 30 40 V V RRM Repetitive peak reverse voltage I 10 A F(RMS) RMS forward current I 3A F(AV) Average forward current T = 100C = 0.5 L 33 A T = 110C = 0.5 L I 80 A FSM Surge non repetitive forward tp=10ms current Sinusoidal P 1700 W ARM Repetitive peak avalanche tp = 1s Tj = 25C power T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 3A 1/51N582x THERMAL RESISTANCES Symbol Parameter Value Unit R Lead length = 10 mm 80 C/W th (j-a) Junction to ambient R Lead length = 10 mm 25 C/W th (j-l) Junction to lead STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit I * 222 mA R Reverse leakage Tj=25CV =V R RRM current 20 20 20 mA Tj = 100C V * 0.475 0.5 0.525 V F Forward voltage drop Tj = 25CI =3A F 0.85 0.9 0.95 V Tj=25CI = 9.4 A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equations : 2 P=0.33xI + 0.035 I for 1N5820 / 1N5821 F(AV) F (RMS ) 2 P=0.33xI + 0.060 I for 1N5822 F(AV) F (RMS ) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward power dissipation versus average forward current (1N5820/1N5821). average forward current (1N5822). PF(av)(W) PF(av)(W) 1.8 2.0 = 0.1 = 0.2 = 0.2 = 0.5 = 0.1 = 0.5 1.8 1.6 = 0.05 1.6 = 0.05 1.4 = 1 1.4 1.2 = 1 1.2 1.0 1.0 0.8 0.8 0.6 0.6 T T 0.4 0.4 0.2 0.2 =tp/T tp =tp/T tp IF(av) (A) IF(av) (A) 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(ARMtp) P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j tp(s) 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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