DLDB3 DC COMPONENTS CO., LTD. THRU RECTIFIER SPECIALISTS R DLDB6 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS (DIACS) FEATURES * Glass passivated three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming, Mini Melf(DL-35) universal-motor speed control and heat controls016(0.4) .008(0.2) .142(3.6) MECHANICAL DATA .134(3.4) * Case: Glass case Minimelf DL-35 * Terminals: MIL-STD-202E, Method 208 guaranteed * Mounting position: Any .016(0.4) * Weight: 0.05 gram Approx008(0.2) .059(1.5) .055(1.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Rating at 25 C ambient tempature unless ohterwise specified Single phase, half wave 60 HZ, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) VALUE PARAMETERS SYMBOL UNITS DLDB3 DLDC34 DLDB4 DLDB6 Power Dissipation on Printed Circuit PC 150 mW (L=10mm) TA=25oC Repetitive Peak on-state Current ITRM 2.0 1.6 mA tp=10s f=100Hz Maximum Lead Temperature for Soldering TSTG/TJ -40 to +125 oC ELECTRICAL CHARACTERISTICS VALUE PARAMETERS TEST CONDITIONS SYMBOL UNITS DLDB3 DLDC34 DLDB4 DLDB6 28 30 35 56 Min C=22nF (Note 2) Breakover Voltage (Note 2) Volts Typ 32 34 40 60 VBO See FIG.1 Max 36 38 45 70 C=22nF (Note 2) Breakover Voltage Symmetry Max I+VBOI-I-VBOI A3 A4 Volts See FIG. 1 Dynamic Breakback Voltage I=(IBO to IF=10mA ) Min IAVI 5 10 Volts (Note 1) See FIG. 1 Output Voltage (Note 1) See FIG. 2 Min VO 5 Volts Breakover Current (Note 1) C=22nF (Note 2) Max IBO 100 A Rise time (Note 1) See FIG. 3 Typ tr 1.5 s VB=0.5 VBO max Leakage Current (Note 1) Max IB 10 A See FIG. 1 NOTE: 1. Electrical characteristics applicable in both forward and reverse directions. 2. Connected in parallel with the devices. REV-3,MAR,2017 1 www.dccomponents.comRATING AND CHARACTERISTIC CURVES (DLDB3 THRU DLDB6) FIG.1 - VOLTAGE-CURRENT CHARACTERISTICS FIG.2 - TEST CIRCUIT FOR OUTPUT VOLTAGE +IF 10K 500K D.U.T. 10mA 220V VO R=20 50Hz 0.1F IBO IB -V +V 0.5 VBO FIG.3 - TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A IP 90% V VBO 10% -IF tr FIG.4 - REPETITIVE PEAK ON-STATE CURRENT VS PULSE DURATION ITRM(A) 2.0 F=100Hz Initial TJ=250C 1.0 FIG.6 - NORMALIZED VBO CHANGE VBO(TJ) VS JUNCTION TEMPERATURE 0.1 VBO(TJ=250C) 1.08 1.06 0.01 10 100 1000 10,000 tp(s) 1.04 FIG.5 - REPETITIVE PEAK ON-STATE CURRENT VS PULSE DURATION P(mW) 160 140 1.02 120 100 1.00 80 25 50 75 100 125 TJ=250C 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tamb(0C) REV-3,MAR,2017 2 www.dccomponents.com