Product Information

NTE6411

Product Image X-ON

Datasheet
Diac; Ifmax:2A; DO35; 35÷45V
Manufacturer: NTE



Price (USD)

10: USD 3.614 ea
Line Total: USD 36.14

210 - Global Stock
Ships to you between
Fri. 31 Mar to Thu. 06 Apr
MOQ: 10 Multiples:1
Pack Size :   1
Availability Price Quantity
210 - Global Stock


Ships to you between Fri. 31 Mar to Thu. 06 Apr

MOQ : 10
Multiples : 1
10 : USD 3.614
50 : USD 3.564
100 : USD 1.5255
250 : USD 0.891
500 : USD 0.7965
1000 : USD 0.729
2500 : USD 0.6885

115 - Global Stock


Ships to you between Fri. 31 Mar to Thu. 06 Apr

MOQ : 1
Multiples : 1
1 : USD 1.19
3 : USD 1.05
19 : USD 0.882
51 : USD 0.826

     
Manufacturer
NTE
Product Category
Diacs
Case
Do35
Mounting
Tht
Kind Of Package
A mm O PACK
Type Of Semiconductor Component
Diac
Max Load Current
2 A
Breakover Voltage
35 To 45 V
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
Stock Image NTE6412
Diac; Ifmax:1.5A; DO35; 56÷70V
Stock : 600
Stock Image NTE6415
Thyristor SIDAC 45V 13A 2-Pin
Stock : 10
Stock Image NTE6416
Thyristor SIDAC 45V 13A 2-Pin
Stock : 0
Stock Image NTE6417
Thyristor SIDAC 90V 13A 2-Pin
Stock : 0
Stock Image NTE6418
Thyristor SIDAC 90V 13A 2-Pin
Stock : 8
Stock Image NTE6419
Thyristor SIDAC 90V 13A 2-Pin
Stock : 0
Stock Image NTE642
RECTIFIER SCHOTTKY BARRIER
Stock : 0
Stock Image NTE643
RECTIFIER DUAL SCHOTTKY BA
Stock : 0
Stock Image NTE644
RECTIFIER DUAL TO-220 COMM
Stock : 10
Stock Image NTE645
RECTIFIER DUAL TO-220 COMM
Stock : 10
Image Description
Stock Image K1050E70
Sidacs 105V
Stock : 0
Stock Image K2000E70
Sidacs 200V
Stock : 0
Stock Image K2200G
Sidacs 220V
Stock : 1889
Hot Stock Image TISP4350H3BJR-S
Thyristor Surge Protection Devices - TSPD 275V(DRM)500A(IPP)350V(BO)
Stock : 7635
Stock Image K2200E70
Sidacs 220V
Stock : 0
Stock Image DB3
Diac; Ifmax:2A; DO35; 28÷36V
Stock : 38175
Stock Image LLDB3
Taiwan Semiconductor Diacs 150mW Bi-directional Trigger Diode
Stock : 0
Stock Image LLDB3-TP
Micro Commercial Components (MCC) Diacs DIAC BIDIRECT 150MW 2A MINIMELF
Stock : 0
Stock Image DLDB3
Diac; Ifmax:2A; MiniMELF; 28÷36V
Stock : 34040
Stock Image TMMDB3
Diac; Ifmax:2A; MiniMELF; 28÷36V
Stock : 4135

NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blockingtoconduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: GlassChip Passivation DO35 Type Trigger Package Wide Voltage Range Selection Absolute Maximum Ratings: Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1 F Device Dissipation (T = 40 to +40C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW A D Derate Above +40C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C j Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278C/W thJA Thermal Resistance, JunctiontoLead (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W thJL Lead Temperature (During Soldering, 1/16 (1.59mm) from case, 10sec max), T . . . . . . . . +230C L Note 1. Based on maximum lead temperature of +85C at 250mW. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Breakover Voltage (Forward and Reverse) NTE6407 V 24 28 32 V BO NTE6408 28 32 36 V NTE6411 35 40 45 V NTE6412 56 63 70 V Breakover Voltage Symmetry NTE6407, NTE6408 V Note 2 2 V BO NTE6411 3 V NTE6412 4 V Note 2. V = +V V . BO BO BOElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Breakback Voltage NTE6407, NTE6408 V V , at 10mA, Note 3 7 V BB NTE6411 V , Note 3 10 V NTE6412 20 V Peak Breakover Current I At Breakover Voltage 25 A BO Peak Pulse Current NTE6407, NTE6408, NTE6411 I For 10 s, 120PPs, T +40C 2.0 A TRM A NTE6412 1.5 A Note 3. Typical switching time is 900ns measured at I . PK 1.100 (27.9) .210 (5.33) Max .030 (.726) .107 (2.73)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.