Product Information

AT45DB041D-SSU

AT45DB041D-SSU electronic component of Dialog Semiconductor

Datasheet
Flash 4M 2.7-3.6V 66Mhz Data Flash

Manufacturer: Dialog Semiconductor
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Price (USD)

98: USD 1.9746 ea
Line Total: USD 193.51

0 - Global Stock
MOQ: 98  Multiples: 1
Pack Size: 1
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Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 98
Multiples : 1

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AT45DB041D-SSU
Dialog Semiconductor

98 : USD 1.9746

     
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Features Single 2.5V or 2.7V to 3.6V Supply TM RapidS Serial Interface: 66MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 User Configurable Page Size 256-Bytes per Page 264-Bytes per Page Page Size Can Be Factory Pre-configured for 256-Bytes Page Program Operation Intelligent Programming Operation 4-megabit 2,048 Pages (256-/264-Bytes/Page) Main Memory Flexible Erase Options 2.5-volt or Page Erase (256-Bytes) Block Erase (2-Kbytes) 2.7-volt Sector Erase (64-Kbytes) Chip Erase (4Mbits) DataFlash Two SRAM Data Buffers (256-, 264-Bytes) Allows Receiving of Data while Reprogramming the Flash Array Continuous Read Capability through Entire Array AT45DB041D Ideal for Code Shadowing Applications Low-power Dissipation 7mA Active Read Current Typical (Not recommended for 25 A Standby Current Typical new designs. Use 15 A Deep Power-down Typical AT45DB041E.) Hardware and Software Data Protection Features Individual Sector Sector Lockdown for Secure Code and Data Storage Individual Sector Security: 128-byte Security Register 64-byte User Programmable Space Unique 64-byte Device Identifier JEDEC Standard Manufacturer and Device ID Read 100,000 Program/Erase Cycles Per Page Minimum Data Retention 20 Years Industrial Temperature Range Green (Pb/Halide-free/RoHS Compliant) Packaging Options 1. Description The AT45DB041D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB041D supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies up to 66MHz. Its 4,325,376-bits of memory are organized as 2,048 pages of 256-bytes or 264-bytes each. In addition to the main memory, the AT45DB041D also contains two SRAM buffers of 256-/264-bytes each. The buffers allow the receiving of data while a page in the main Memory is being reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-con- tained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a RapidS serial interface to sequentially access its data. The simple 3595TDFLASH8/2013 sequential access dramaticallyreduces active pin count, facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage and low-power are essential. To allow for simple in-system reprogrammability, the AT45DB041D does not require high input voltages for programming. The device operates from a single power supply, 2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The AT45DB041D is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK). All programming and erase cycles are self-timed. 2. Pin Configurations and Pinouts Table 2-1. Pin Configurations Asserted Symbol Name and Function State Type Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the device will be deselected and normally be placed in the standby mode (not Deep Power-Down mode), and the output pin (SO) will be in a high-impedance state. When the device is deselected, data will not be accepted on the input pin (SI). CS Low Input A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition is required to end an operation. When ending an internally self-timed operation such as a program or erase cycle, the device will not enter the standby mode until the completion of the operation. Serial Clock: This pin is used to provide a clock to the device and is used to control the flow of data to and from SCK the device. Command, address, and input data present on the SI pin is always latched on the rising edge of SCK, Input while output data on the SO pin is always clocked out on the falling edge of SCK. Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input including SI Input command and address sequences. Data on the SI pin is always latched on the rising edge of SCK. Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin is always clocked out on SO Output the falling edge of SCK. Write Protect: When the WP pin is asserted, all sectors specified for protection by the Sector Protection Register will be protected against program and erase operations regardless of whether the Enable Sector Protection command has been issued or not. The WP pin functions independently of the software controlled protection method. After the WP pin goes low, the content of the Sector Protection Register cannot be modified. If a program or erase command is issued to the device while the WP pin is asserted, the device will simply ignore WP Low Input the command and perform no operation. The device will return to the idle state once the CS pin has been deasserted. The Enable Sector Protection command and Sector Lockdown command, however, will be recognized by the device when the WP pin is asserted. The WP pin is internally pulled-high and may be left floating if hardware controlled protection will not be used. However, it is recommended that the WP pin also be externally connected to V whenever possible. CC Reset: A low state on the reset pin (RESET) will terminate the operation in progress and reset the internal state machine to an idle state. The device will remain in the reset condition as long as a low level is present on the RESET pin. Normal operation can resume once the RESET pin is brought back to a high level. RESET Low Input The device incorporates an internal power-on reset circuit, so there are no restrictions on the RESET pin during power-on sequences. If this pin and feature are not utilized it is recommended that the RESET pin be driven high externally. Device Power Supply: The V pin is used to supply the source voltage to the device. CC V Power CC Operations at invalid V voltages may produce spurious results and should not be attempted. CC GND Ground: The ground reference for the power supply. GND should be connected to the system ground. Ground 2 AT45DB041D 3595TDFLASH8/2013

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ADESTO
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation

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