1N5819HW 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary ( T = +25C) Features and Benefits A High Surge Capability V (V) I (A) V (mV) I (A) RRM O F(MAX) R(MAX) Low Power Loss, High Efficiency 40 1.0 450 50 High Current Capability and Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) The device is a single rectifier offering low V and excellent high F temperature stability. This device is ideal for use in general Mechanical Data rectification applications: Case: SOD123 For Use in Low Voltage, High Frequency Inverters Plastic Material: Molded Plastic. UL Flammability Classification Free Wheeling Rating 94V-0 Polarity Protection Application Moisture Sensitivity: Level 1 per J-STD-020 Polarity: Cathode Band Leads: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 e3 Weight: 0.01 grams (Approximate) Top View Ordering Information (Note 4) Part Number Case Packaging 1N5819HW-7-F SOD123 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See 1N5819HW Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V RRM 40 V Working Peak Reverse Voltage I = 1.0mA V R RWM DC Blocking Voltage V R Average Rectified Output Current I 1.0 A O Repetitive Peak Forward Current I 1.5 A FRM t 1ms, 0.5 p Non-Repetitive Peak Forward Surge Current 8.3ms I 25 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 450 mW D Typical Thermal Resistance Junction to Ambient (Note 5) 222 C/W R JA Operating and Storage Temperature Range T T -65 to +125 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) 40 V V I = 1.0mA (BR)R R 0.320 I = 0.1A F Forward Voltage V 0.450 V I = 1.0A F F 0.750 I = 3.0A F VR = 40V, TA = +25C 1.0 mA V = 40V, T = +100C 10 mA R A 50 A V = 4V, T = +25C 10 R A Reverse Leakage Current (Note 6) I R 1 2 mA V = 4V, T = +100C R A 15 75 A V = 6V, T = +25C R A 3 mA 1.5 V = 6V, T = +100C R A Total Capacitance C 50 60 pF V = 4V, f = 1.0MHz T R Notes: 5. Device mounted on FR-4 PC Board, 2 x2 , 2 oz. copper, single sided, cathode pad dimensions 0.75 x1.0 , anode pad dimensions 0.25 x1.0 . 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 1N5819HW February 2018 Diodes Incorporated www.diodes.com Document number: DS30217 Rev. 18 - 2