74AHC1G00QSE-7 Diodes Incorporated

74AHC1G00Q SINGLE 2-INPUT POSITIVE NAND GATE Description Pin Assignments The 74AHC1G00Q is an automotive compliant single, two-input ( Top View ) positive NAND gate with a standard push-pull output. The device is designed for operation with a power supply range of 2.0V to 5.5V. The A 1 5 Vcc gate performs the positive Boolean function: B 2 3 4 GND Y Y = A B or Y = A + B SOT25 / SOT353 Applications Features General Purpose Logic Grade 1 Ambient Temperature Operation: -40C to +125C Wide Array of Products, such as: Supply Voltage Range from 2.0V to 5.5V Automotive Applications within Grade 1 Temperature 8mA Output Drive at 4.5V Range CMOS Low-Power Consumption Industrial Computing/Controls/Automation Schmitt Trigger Action at All Inputs Make the Circuit Tolerant for High Reliability Networking/Communications Slower Input Rise and Fall Time Industrial/Agricultural Equipment Inputs not Limited by V CC Balanced Propagation Delays Balanced Drive Capability ESD Protection Tested per AEC-Q100 Exceeds 2000-V Human Body Model (AEC-Q100-002) Exceeds 1000-V Charged Device Model (AEC-Q100-011) Latch-Up Exceeds 100mA (AEC-Q100-004) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The 74AHC1G00Q is suitable for automotive applications requiring specific change control this part is AEC-Q100 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. 74AHC1G00Q Pin Descriptions Logic Diagram Pin Name Description A Data Input 1 4 A B Data Input Y 2 B GND Ground Y Data Output V Supply Voltage CC Function Table Inputs Output A B Y H H L L X H X L H Absolute Maximum Ratings (Notes 4 & 5) Symbol Description Rating Unit ESD HBM Human Body Model ESD Protection 2 kV ESD CDM Charged Device Model ESD Protection 1 kV V Supply Voltage Range -0.5 to 6.5 V CC V Input Voltage Range -0.5 to 6.5 V I Voltage Applied to Output in High or Low State V VO -0.5 to VCC + 0.5 -20 mA IIK Input Clamp Current VI < 0 20 mA IOK Output Clamp Current (VO < 0 or VO > VCC) 25 mA IO Continuous Output Current (VO = 0 to VCC) ICC Continuous Current Through VCC 75 mA IGND Continuous Current Through GND -75 mA T Operating Junction Temperature -40 to +150 C J T Storage Temperature -65 to +150 C STG P Total Power Dissipation (Note 6) 250 mW D Notes: 4. Stresses beyond the absolute maximum can result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values. 5. Forcing the maximum allowed voltage could cause a condition exceeding the maximum current or conversely forcing the maximum current could cause a condition exceeding the maximum voltage. The ratings of both current and voltage must be maintained within the controlled range. 6. This will need to be derated at higher operating temperatures to prevent exceeding maximum T . Refer to package thermal characteristics section. J 2 of 9 74AHC1G00Q August 2020 Diodes Incorporated www.diodes.com Document number: DS41446 Rev. 1 - 2