Green B160S1F 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V (MAX) (V) I ( A) Reduced Low Forward Voltage Drop (V ) Better Efficiency and RRM O F R(MAX) F Cooler Operation 60 1 0.65 200 Reduced High-Temperature Reverse Leakage Increased Reliability against Thermal Runaway Failure in High Temperature Operation Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications The Schottky rectifier providing low V and excellent reverse leakage Case: SOD123F (Standard) F stability at high temperatures, this device is ideal for use in general Case Material: Molded Plastic, Green Molding Compound. UL rectification applications such as: Flammability Classification Rating 94V-0 Boost Diode Moisture Sensitivity: Level 1 per J-STD-020 Blocking Diode Terminals: Matte Tin Finish Annealed over Copper Leadframe. Recirculating Diode Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.0015 grams (Approximate) SOD123F (Standard) Top View Ordering Information (Note 4) Part Number Case Packaging B160S1F-7 SOD123F (Standard) 3000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See B160S1F Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 60 V V RWM DC Blocking Voltage V RM RMS Reverse Voltage V 42 V R(RMS) Non-Repetitive Peak Forward Surge Current 30 A I FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance Junction to Ambient (Note 5) R 100 C/W JA Typical Thermal Resistance, Junction to Case (Note 5) 50 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ. Max Unit Test Condition 0.53 0.65 I = 1A, T = +25C F J Forward Voltage Drop V V F 0.50 I = 1A, T = +125C F J 0.02 0.2 V = 60V, T = +25C R J Leakage Current (Note 6) mA I R 8.2 V = 60V, T = +125C R J Typical Capacitance 45 pF CT VR = 4.0V, f = 1MHz Notes: 5. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 B160S1F March 2018 Diodes Incorporated www.diodes.com Document number: DS37031 Rev. 5 - 2