F2 F2 F2 BC857BLP4 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X2-DFN1006-3 BV > -45V CEO Case Material: Molded Plastic,Gree Molding Compound. I = -100mA High Collector Current C UL Flammability Classification Rating 94V-0 P = 1000mW Power Dissipation D Moisture Sensitivity: Level 1 per J-STD-020 2 0.60mm Package Footprint, 13 times Smaller than SOT23 Terminals: Finish NiPdAu. 0.4mm Height Package Minimizing Off-Board Profile Solderable per MIL-STD-202, Method 208 e4 Complementary NPN Type BC847BLP4 Weight: 0.0008 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability C X2-DFN1006-3 B B C E E Bottom View Device Symbol Top View Device Schematic Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel BC857BLP4-7 F2 7 8 3,000 BC857BLP4-7B F2 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC857BLP4 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current -100 mA IC Peak Pulse Collector Current -200 mA I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 400 Power Dissipation mW P D (Note 6) 1000 (Note 5) 310 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 120 Thermal Resistance, Junction to Lead (Note 7) 120 C/W R JL Operating and Storage and Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 200 V B Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 V I = 10A, I = 0 CBO C B Collector-Emitter Breakdown Voltage (Note 9) BV -45 V I = 10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage BV -5 V I = 1A, I = 0 EBO E C DC Current Gain h 220 300 475 V = -5.0V, I = -2.0mA FE CE C I = -10mA, I = -0.5mA -90 -300 C B Collector-Emitter Saturation Voltage (Note 9) mV V CE(SAT) -250 -650 I = -100mA, I = -5.0mA C B -700 I = -10mA, I = -0.5mA C B Base-Emitter Saturation Voltage (Note 9) V mV BE(SAT) -850 I = -100mA, I = -5.0mA C B -600 -670 -750 V = -5.0V, I = -2.0mA CE C Base-Emitter Voltage (Note 9) mV V BE(ON) -710 -820 V = -5.0V, I = -10mA CE C -15 nA V = -30V CB Collector-Cutoff Current I CBO -4.0 A V = -30V, T = +150C CB A V = -5.0V, I = -10mA, CE C Gain Bandwidth Product 100 MHz f T f = 100MHz Collector-Base Capacitance 3.0 pF C V = -10V, f = 1.0MHz CBO CB Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 BC857BLP4 May 2015 Diodes Incorporated www.diodes.com Document number: DS31361 Rev. 6 - 2