DCX (LO-R1) UDCX (LO-R1) U COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-363 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 3) Gree Device (Note 4 and 5) A 0.10 0.30 C B CXX YM B 1.15 1.35 C 2.00 2.20 Mechanical Data D 0.65 Nominal Case: SOT-363 Case Material: Molded Plastic. UL Flammability F 0.30 0.40 H Classification Rating 94V-0 H 1.80 2.20 Moisture Sensitivity: Level 1 per J-STD-020C K J 0.10 M Terminals: Finish - Matte Tin Solderable per MIL-STD- 202, Method 208 K 0.90 1.00 Lead Free Plating (Matte Tin Finish annealed over Alloy J L 0.25 0.40 42 leadframe). L D F Terminal Connections: See Diagram M 0.10 0.25 Marking Information: See Page 4 0 8 Type Code: See Table Below All Dimensions in mm Ordering Information: See Page 4 Weight: 0.006 grams (approximate) P/N R1 (NOM) R2 (NOM) Type Code R R DCX122LU 0.22K 10K C81 1 R 1 2 DCX142JU 0.47K 10K C82 DCX122TU 0.22K OPEN C83 R R R 2 1 1 DCX142TU 0.47K OPEN C84 R , R R Only 1 2 1 SCHEMATIC DIAGRAM Maximum Ratings NPN Section T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage V 50 V CC Input Voltage DCX122LU -5 to +6 V V IN DCX142JU -5 to +6 Input Voltage DCX122TU V 5 V EBO (MAX) DCX142TU Output Current All 100 mA I C Power Dissipation (Note 1, 2) 200 mW P d Thermal Resistance, Junction to Ambient Air (Note 2) 625 R C/W JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at Maximum Ratings PNP Section T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage V -50 V CC Input Voltage DCX122LU +5 to -6 V V IN DCX142JU +5 to -6 Input Voltage DCX122TU V -5 V EBO (MAX) DCX142TU Output Current All I -100 mA C Power Dissipation (Note 1,2) P 200 mW d Thermal Resistance, Junction to Ambient Air (Note 1,2) 625 R C/W JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Electrical Characteristics NPN Section T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DCX122LU 0.3 V V V = 5V, I = 100A l(off) CC O DCX142JU 0.3 Input Voltage V = 0.3V, I = 20mA DCX122LU 2.0 O O V V l(on) DCX142JU 2.0 V = 0.3V, I = 20mA O O Output Voltage V 0.3V V I /I = 5mA/0.25mA O(on) O l DCX122LU 28 Input Current I mA V = 5V l I DCX142JU 13 Output Current 0.5 I A V = 50V, V = 0V O(off) CC I DCX122LU 56 DC Current Gain G V = 5V, I = 10mA l O O DCX142JU 56 Gain-Bandwidth Product* f 200 MHz V = 10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics NPN Section T = 25C unless otherwise specified R1 Only A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage BV 40 V I = 1mA CEO C Emitter-Base Breakdown Voltage DCX122TU I = 50A E BV 5 V EBO DCX142TU I = 50A E Collector Cutoff Current I 0.5 A V = 50V CBO CB DCX122TU 0.5 Emitter Cutoff Current I A V = 4V EBO EB DCX142TU 0.5 Collector-Emitter Saturation Voltage V 0.3 V I = 5mA, I = 0.25mA CE(sat) C B DCX122TU 100 250 600 DC Current Transfer Ratio h I = 1mA, V = 5V FE C CE DCX142TU 100 250 600 Gain-Bandwidth Product* f 200 MHz V = 10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only DS30425 Rev. 5 - 2 DCX (LO-R1) U 2 of 4 Diodes Incorporated www.diodes.com NEW PRODUCT