P2 P2 P2 DDTA144ELP PNP PRE-BIASED (R1=R2) SMALL SIGNAL TRANSISTOR IN DFN1006 Product Summary Mechanical Data Part Number R1 (NOM) R2 (NOM) Marking Case: X1-DFN1006-3 DDTA144ELP 47k 47k P2 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish NiPdAu. Solderable per MIL-STD-202, Method 208 e4 Epitaxial Planar Die Construction Weight: 0.0009 grams (Approximate) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Totally Lead Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony FreeGree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability X1-DFN1006-3 B 1 3 C OUT OUT IN B C (or -supply) 3 (or -supply) B IN C 1 R 1 E E E R 2 + Supply 2 or GND GND (or +supply) Bottom View Top View Device Symbol Equivalent Inverter Pin-Out Circuit Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DDTA144ELP-7 P2 7 8 3,000 DDTA144ELP-7B P2 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DDTA144ELP Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Supply Voltage V -50 V CC Input Voltage V +10 to -40 V IN Output Current (I ) I -200 mA o C(MAX) Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 250 mW D Power Deration above +25C P 2 mW/C der Thermal Resistance, Junction to Ambient Air (Note 5) 500 C/W R JA (Equivalent to one heated junction of PNP) Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Off Characteristics (Notes 6 & 7) Collector-Base Breakdown Voltage -50 V BV I = -10A, I = 0 CBO C E Collector-Emitter Breakdown Voltage -50 V BV I = -1mA, I = 0 CEO C B Emitter-Base Breakdown Voltage BV -4.5 V I = -100A, I = 0 EBO E C Collector Cutoff Current I -100 nA V = -50V, V = 3V CEX CE EB(OFF) Base Cutoff Current (I ) I -60 A V = -50V, V = 3V BEX BL CE EB(OFF) Collector-Base Cut Off Current I -100 nA V = -50V, I = 0 CBO CB E Collector-Emitter Cut Off Current, I I -100 nA V = -50V, I = 0 O(off) CES CE B Emitter-Base Cut Off Current I -100 A V = -4V, I = 0 EBO EB C Input Off Voltage -300 mV V V = -5V, I = -100uA I(off) CC O On Characteristics (Notes 6 & 7) Input-On Voltage -3 V V V = -0.3V, I = -5mA I(on) O O Input Current -180 A I V = -5V I I 90 V =-5V, I = -2.5mA CE C 120 V = -5V, I = -5mA CE C 150 V = -5V, I = -10mA CE C DC Current Gain hFE 100 V = -5V, I = -100mA CE C 180 V = -5V, I = -200mA CE C 250 V = -5V, I = -300mA CE C -150 mV I = -1mA, I = -10mA Output On Voltage I O V O(on) (Collector-Emitter Saturation Voltage) -800 mV I = -1mA, I = -40mA I O Input Resistance R1 33 47 61 k Resistance Ratio (R2/R1) 0.8 1 1.2 Small Signal Characteristics Current Gain-Bandwidth Product 250 MHz f V = -10V, I = -5mA, f = 100 MHz T CE E Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 7. Guaranteed by design. 2 of 5 DDTA144ELP May 2015 Diodes Incorporated www.diodes.com Document number: DS30844 Rev. 7 - 2