DLD101 LINEAR MODE CURRENT SINK LED DRIVER Features Mechanical Data Case: DFN3030D-8 Primarily Designed for Driving LED/s for Illumination, Signage and Backlighting Applications Case Material: Molded Plastic,Gree Molding Compound. Ideally Suited for Linear Mode Constant Current Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 V Referenced Current Sink Circuit BE Includes: Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 N-Channel Enhancement Mode MOSFET (Q1) Marking Information: See Page 7 Base Accessible Pre-Biased Transistor (Q2) Ordering Information: See Page 7 High Voltage Capable (50V) Weight: 0.0172 grams (approximate) Small Form Factor Surface Mount Package High Dissipation Capability Low Thermal Resistance Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability V Supply CC LED String R C 4 3 2 1 GD S2 B1 B1 E1 C 8 76 5 S2 B1 B1 E1 V DS B Q2 87 6 5 R1 R2 R2 Q1 Q1 E R1 Option 3: S Q2 5 6 8 V 7 BE I LED R S Option 3 Options 1 & 2: Option 2 1.1 V BE I LED Option 1 R S Option 2: 1 23 4 12 3 4 R S Capacitor is across R2 for D2 G2 NC C1 better noise performance. D2 G2 NC C1 Top View Top View Typical Application Circuit for Linear Internal Schematic Package Pin-Out Configuration Mode Current Sink LED Driver Maximum Ratings: (Q1) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain Source Voltage 100 V V DSS Gate-Source Voltage V V 20 GSS Drain Current (Note 3) T = 25C 1.0 A A I D 0.8 T = 70C A Drain Current (Note 3) Pulsed 3.0 A I DM Body-Diode Continuous Current (Note 3) 1.0 A I S Maximum Ratings: (Q2) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage V 50 V CC Input Voltage -5 to +30 V V IN Output Current (DC) 100 mA I O Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DLD101 Thermal Characteristics Total Device Characteristic Symbol Value Unit 0.7 (Note 3) Power Dissipation T = 25C P 0.9 (Note 4) W A D 1.4 (Note 5) See Figure 1 Thermal Resistance Junction to Ambient T = 25C R C/W A JA (Notes 3, 4, & 5) See Figure 2 Thermal Resistance Junction to Case T = 25C C/W A R JC (Notes 3, 4, & 5) Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6). 4. Part mounted on FR-4 substrate PC board, 2oz Copper with 6 mm2 Cu Area, MOSFET element activated. 5. Part mounted on FR-4 substrate PC board, 2oz Copper with 35 mm2 Cu Area, MOSFET element activated. Electrical Characteristics: (Q1) T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 2.0 4.1 V V = V , I = 250A GS(th) DS GS D 0.85 V = 10V, I = 1.5A GS D Static Drain-Source On-Resistance R DS (ON) 0.99 V = 6V, I = 1A GS D Forward Transconductance 0.9 S g V = 15V, I = 1A fs DS D Diode Forward Voltage 0.89 1.1 V V V = 0V, I = 1.5A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 129 pF C iss V = 50V, V = 0V DS GS Output Capacitance C 14 pF oss f = 1.0MHz Reverse Transfer Capacitance C 8 pF rss SWITCHING CHARACTERISTICS Total Gate Charge Q 3.4 g Gate-Source Charge Q 0.9 nC V = 50V, V = 10V, I = 1A gs DS GS D Gate-Drain Charge Q 1 gd Turn-On Delay Time t 7.9 d(on) Rise Time t 11.4 r V = 50V, V = 10V, GS DS ns Turn-Off Delay Time 14.3 I = 1A, R 6 t D G d(off) Fall Time 9.6 t f Electrical Characteristics: (Q2) T = 25C unless otherwise specified A Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition 0.4 - - V V V = 5V, I = 100A I(off) CC O Input Voltage V - - 1.5 V V = 0.3V, I = 5mA I(on) CC O Output Voltage V - 0.05 0.3 V I /I = 5mA/0.25mA O(on) O I Output Current I - - 0.5 A V = 50V, V = 0V O(off) CC I DC Current Gain G 80 - - - V = 5V, I = 10mA 1 O O Input Resistance R 3.2 4.7 6.2 k - 1 Resistance Ratio 8 10 12 - - R /R 2 1 V = 10V, I = 5mA, CE E Transition Frequency f - 260 - MHz T f = 100MHz Notes: 6. Short duration pulse test used to minimize self-heating effect. 2 of 9 April 2010 DLD101 Diodes Incorporated www.diodes.com Document number: DS32007 Rev. 8 - 2 NEW PRODUCT