DMG7401SFG
P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features and Benefits
I max Low R ensures on state losses are minimized
D DS(ON)
V R max
(BR)DSS DS(ON)
T = +25C
A Small form factor thermally efficient package enables higher
density end products
13m @ V = -10V -9.8A
GS
-30V
Occupies just 33% of the board area occupied by SO-8 enabling
25m @ V = -4.5V
GS -7.0A
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(R ) and yet maintain superior switching performance, making it
DS(ON)
Mechanical Data
ideal for high efficiency power management applications.
Case: POWERDI3333
Case Material: Molded Plastic,Gree Molding Compound.
Applications
UL Flammability Classification Rating 94V-0
Backlighting
Moisture Sensitivity: Level 1 per J-STD-020
Power Management Functions
Terminal Connections Indicator: See diagram
DC-DC Converters
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0174 grams (approximate)
Drain
POWERDI3333
Pin 1
S
S
S
G
Gate
D
D
Gate
ESD PROTECTED
D
Protection
Source
D
Diode
Top View Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number Case Packaging
DMG7401SFG-7 POWERDI3333 2000/Tape & Reel
DMG7401SFG-13 POWERDI3333 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMG7401SFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V -30 V
DSS
Gate-Source Voltage V 25 V
GSS
Steady T = +25C -9.8
A
I A
D
State -7.7
T = +70C
A
Continuous Drain Current (Note 6) V = -10V
GS
T = +25C -13.5
A
t<10s A
I
D
-10.8
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 5) I -3.0 A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I -80 A
DM
Avalanche Current (Notes 7 & 8) I 14 A
AR
Repetitive Avalanche Energy (Notes 7 & 8) L = 1mH E 104 mJ
AR
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
0.94
T = +25C
A
Total Power Dissipation (Note 5) P W
D
0.6
T = +70C
A
Steady State 137 C/W
Thermal Resistance, Junction to Ambient (Note 5) R
JA
t<10s 82 C/W
2.2
T = +25C
A
Total Power Dissipation (Note 6) P W
D
T = +70C 1.3
A
Steady State 60 C/W
Thermal Resistance, Junction to Ambient (Note 6) R
JA
t<10s 36 C/W
Thermal Resistance, Junction to Case (Note 6) 3.0 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V
DSS DS GS
Gate-Source Leakage I 10 A V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V -1.7 -3.0 V V = V , I = -250A
GS(th) DS GS D
9 11
V = -20V, I = -12A
GS D
Static Drain-Source On-Resistance 10 13 m
R V = -10V, I = -9A
DS (ON) GS D
17 25
V = -4.5V, I = -5A
GS D
Forward Transfer Admittance 21 S
|Y | V = -5V, I = -10A
fs DS D
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 2246 2987 pF
iss
V = -15V, V = 0V,
DS GS
Output Capacitance C 352 468 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 294 391 pF
rss
Gate resistance R 5.1 10 V = 0V, V = 0V, f = 1.0MHz
g DS GS
Total Gate Charge (V = 4.5V) Q 20.5 30 nC
GS g
Total Gate Charge (V = 10V) Q 41 58 nC
GS g
V = -15V, I = -12A
DS D
Gate-Source Charge Q 7.6 - nC
gs
Gate-Drain Charge 8.0 - nC
Q
gd
Turn-On Delay Time 11.3 23 ns
t
D(on)
Turn-On Rise Time 15.4 31 ns
t V = -15V, V = -10V,
r DD GS
Turn-Off Delay Time 38.0 61 ns
t R = 1.25, R = 3,
D(off) L G
Turn-Off Fall Time t 22.0 38 ns
f
BODY DIODE CHARACTERISTICS
Diode Forward Voltage V -0.7 -1.0 V V = 0V, I = -1A
SD GS S
Reverse Recovery Time (Note 9) t 20 31 ns
rr
I = -9.5A, dI/dt = 100A/s
S
Reverse Recovery Charge (Note 9) Q 9.5 18 nC
rr
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AR AR J
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to product testing
POWERDI is a registered trademark of Diodes Incorporated
2 of 6 April 2014
DMG7401SFG
Diodes Incorporated
www.diodes.com
Document number: DS35623 Rev. 11 - 2
NEW PRODUCT