ZXMN10B08E6TA Diodes Incorporated

ZXMN10B08E6TA electronic component of Diodes Incorporated
ZXMN10B08E6TA Diodes Incorporated
ZXMN10B08E6TA MOSFETs
ZXMN10B08E6TA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXMN10B08E6TA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMN10B08E6TA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. ZXMN10B08E6TA
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 100V N-Chnl UMOS
Datasheet: ZXMN10B08E6TA Datasheet (PDF)
Price (USD)
3000: USD 0.3 ea
Line Total: USD 900 
Availability : 14550
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
3000$ 0.3
6000$ 0.2938

Availability 14550
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3
6000$ 0.2938


Availability 9332
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3375
10$ 0.8592
100$ 0.5071
500$ 0.4136
1000$ 0.3751
3000$ 0.3157


Availability 271
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.316
10$ 0.9618
25$ 0.8008
39$ 0.4886
107$ 0.462


Availability 92
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.701
10$ 1.3778
30$ 0.9112
100$ 0.712
500$ 0.6486
1000$ 0.6151

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
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Type
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Hts Code
Mxhts
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We are delighted to provide the ZXMN10B08E6TA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN10B08E6TA and other electronic components in the MOSFETs category and beyond.

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ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Max I D BV Max R Fast Switching Speed DSS DS(on) T = +25C A (Note 6) Low Threshold 230m V = 10V 1.9A GS Low Gate Drive 100V 300m V = 4.5V 1.68A GS SOT26 Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes it ideal for high-efficiency, low voltage, power management applications. Mechanical Data Case: SOT26 DC - DC Converters Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 Disconnect Switches Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) SOT26 Top View Pinout Top-view Device Symbol Ordering Information (Note 4) Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXMN10B08E6TA 7 8 3,000 ZXMN10B08E6TC 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN10B08E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS (Note 6) 1.9 Continuous Drain Current V = 10V T = +70C (Note 6) I 1.5 A GS A D (Note 5) 1.6 Pulsed Drain Current (Note 7) I 9 A DM Continuous Source Current (Body Diode) (Note 6) I 2.5 A S Pulsed Source Current (Body Diode) (Note 7) I 9 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 Power Dissipation W (Note 5) P D Linear Derating Factor 8.8 mW/C 1.7 Power Dissipation W (Note 6) P D Linear Derating Factor 13.6 mW/C (Note 5) 113 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 73 Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t 5 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Thermal Characteristics 2 of 7 March 2015 ZXMN10B08E6 Diodes Incorporated www.diodes.com Datasheet Number: DS33570 Rev. 3 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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