ZXMN10B08E6TA Diodes Incorporated

ZXMN10B08E6TA electronic component of Diodes Incorporated
ZXMN10B08E6TA Diodes Incorporated
ZXMN10B08E6TA MOSFETs
ZXMN10B08E6TA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXMN10B08E6TA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMN10B08E6TA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.ZXMN10B08E6TA
Manufacturer:Diodes Incorporated
Category:MOSFETs
Description:MOSFET 100V N-Chnl UMOS
Datasheet:ZXMN10B08E6TA Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 1.975 ea
Line Total: USD 1.98 
Availability : 1
  
Ship by Fri. 19 Jun to Tue. 23 Jun
QtyUnit Price
1$ 1.975
10$ 1.1904
100$ 0.7205
500$ 0.5808
1000$ 0.5137
3000$ 0.4532
  

Availability1
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.975
10$ 1.1904
100$ 0.7205
500$ 0.5808
1000$ 0.5137
3000$ 0.4532

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the ZXMN10B08E6TA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN10B08E6TA and other electronic components in the MOSFETs category and beyond.

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ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Max I D BV Max R Fast Switching Speed DSS DS(on) T = +25C A (Note 6) Low Threshold 230m V = 10V 1.9A GS Low Gate Drive 100V 300m V = 4.5V 1.68A GS SOT26 Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes it ideal for high-efficiency, low voltage, power management applications. Mechanical Data Case: SOT26 DC - DC Converters Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 Disconnect Switches Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) SOT26 Top View Pinout Top-view Device Symbol Ordering Information (Note 4) Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXMN10B08E6TA 7 8 3,000 ZXMN10B08E6TC 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN10B08E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS (Note 6) 1.9 Continuous Drain Current V = 10V T = +70C (Note 6) I 1.5 A GS A D (Note 5) 1.6 Pulsed Drain Current (Note 7) I 9 A DM Continuous Source Current (Body Diode) (Note 6) I 2.5 A S Pulsed Source Current (Body Diode) (Note 7) I 9 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 Power Dissipation W (Note 5) P D Linear Derating Factor 8.8 mW/C 1.7 Power Dissipation W (Note 6) P D Linear Derating Factor 13.6 mW/C (Note 5) 113 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 73 Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t 5 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Thermal Characteristics 2 of 7 March 2015 ZXMN10B08E6 Diodes Incorporated www.diodes.com Datasheet Number: DS33570 Rev. 3 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesIncorporated
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX
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