DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
A
Epitaxial Planar Die Construction
SOT-26
Complementary PNP Type Available (DMMT5401)
Dim Min Max Typ
Ideal for Low Power Amplification and Switching
A 0.35 0.50 0.38
Intrinsically Matched NPN Pair (Note 1)
B C
B 1.50 1.70 1.60
2% Matched Tolerance, h , V , V
FE CE(SAT) BE(SAT)
Lead Free/RoHS Compliant (Note 4) C 2.70 3.00 2.80
Gree Device (Note 5 and 6)
D 0.95
H
F 0.55
Mechanical Data
H 2.90 3.10 3.00
K
M
Case: SOT-26
J 0.013 0.10 0.05
Case Material: Molded Plastic,Gree Molding
K 1.00 1.30 1.10
Compound, Note 7. UL Flammability Classification J
D F L
Rating 94V-0
L 0.35 0.55 0.40
Moisture Sensitivity: Level 1 per J-STD-020C E E C
C E C
1 2 2 1 1 2
M 0.10 0.20 0.15
Terminal Connections: See Diagram
0 8
Terminals: Solderable per MIL-STD-202, Method 208
All Dimensions in mm
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
C B B B E B
Marking Information: K4R & K4T, See Page 3 1 1 2 1 2 2
Ordering & Date Code Information: See Page 3
DMMT5551S
DMMT5551
(K4T Marking Code)
Weight: 0.006 grams (approximate) (K4R Marking Code)
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage V 180 V
CBO
Collector-Emitter Voltage V 160 V
CEO
Emitter-Base Voltage 6.0 V
V
EBO
Collector Current - Continuous (Note 2) 200 mA
I
C
Power Dissipation (Note 2, 3) P 300 mW
d
Thermal Resistance, Junction to Ambient (Note 2) 417 C/W
R
JA
Operating and Storage Temperature Range T , T -55 to +150 C
j STG
Notes: 1. Built with adjacent die from a single wafer.
2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our
website at
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage V 180 V I = 100A, I = 0
(BR)CBO C E
Collector-Emitter Breakdown Voltage V 160 V I = 1.0mA, I = 0
(BR)CEO C B
Emitter-Base Breakdown Voltage 6.0 V
V I = 10A, I = 0
(BR)EBO E C
nA
V = 120V, I = 0
CB E
Collector Cutoff Current 50
I
CBO
A
V = 120V, I = 0, T = 100C
CB E A
Emitter Cutoff Current 50 nA
I V = 4.0V, I = 0
EBO EB C
ON CHARACTERISTICS (Note 7)
I = 1.0mA, V = 5.0V
80 C CE
DC Current Gain (Note 8) 80 250
h I = 10mA, V = 5.0V
FE C CE
30
I = 50mA, V = 5.0V
C CE
0.15 I = 10mA, I = 1.0mA
C B
Collector-Emitter Saturation Voltage V V
CE(SAT)
0.20
I = 50mA, I = 5.0mA
C B
I = 10mA, I = 1.0mA
C B
Base-Emitter Saturation Voltage V 1.0 V
BE(SAT)
I = 50mA, I = 5.0mA
C B
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C 6.0 pF V = 10V, f = 1.0MHz, I = 0
obo CB E
V = 10V, I = 1.0mA,
CE C
Small Signal Current Gain h 50 250
FE
f = 1.0kHz
V = 10V, I = 10mA,
CE C
Current Gain-Bandwidth Product 100 300 MHz
f
T
f = 100MHz
V = 5.0V, I = 200A,
CE C
Noise Figure NF 8.0 dB
R = 1.0k, f = 1.0kHz
S
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, h , (matched at I = 10mA and V = 5V) Collector Emitter Saturation Voltage, V , and Base Emitter Saturation Voltage,
FE C CE CE(SAT)
V are matched with typical matched tolerances of 1% and maximum of 2%.
BE(SAT)
400 0.15
I
C
0.14 = 10
350 I
B
0.13
300
0.12
T = 150C
A
0.11
250
0.10
200
0.09
150
0.08
T = 25C
A
0.07
100
0.06
50
0.05
T = -50C
A
0
0.04
0 175 200 110 100
25 50 75 100 125 150 1,000
T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA)
A C
Fig. 1, Max Power Dissipation vs. Fig. 2, Collector Emitter Saturation Voltage
Ambient Temperature vs. Collector Current
DS30436 Rev. 8 - 2 2 of 4 DMMT5551/DMMT5551S
Diodes Incorporated
www.diodes.com
P , POWER DISSIPATION (mW)
D
V, COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)