DXT5401 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Complementary NPN Type Available (DXT5551) Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020 Ideal for Medium Power Switching or Amplification Applications Terminals: Finish - Matte Tin annealed over Copper Leadframe Lead Free By Design/RoHS Compliant (Note 1) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Gree Device (Note 2) Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.055 grams (approximate) COLLECTOR 3 E 2,4 2 C C 4 1 BASE 1 B 3 EMITTER Top View Device Schematic Pin Out Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -160 V V CBO Collector-Emitter Voltage -150 V V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current I -600 mA C Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation T = 25C (Note 3) P A D Thermal Resistance, Junction to Ambient T = 25C (Note 3) R 125 C/W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DXT5401 Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -160 V I = -100 A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -150 V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -10A, I = 0 (BR)EBO E C nA V = -120V, I = 0 CB E Collector Cutoff Current -50 I CBO A V = -120V, I = 0, T = 100 C CB E A Emitter Cutoff Current I -50 nA V = -3.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) V = -5.0V, I = -1.0mA 50 CE C DC Current Gain h 60 240 V = -5.0V, I = -10mA FE CE C 50 V = -5.0V, I = -50mA CE C -0.2 I = -10mA, I = -1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.5 I = -50mA, I = -5.0mA C B I = -10mA, I = -1.0mA C B Base-Emitter Saturation Voltage V -1.0 V BE(SAT) I = -50mA, I = -5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 6.0 pF C V = -10V, f = 1.0MHz, I = 0 obo CB E Small Signal Current Gain 40 200 h V = -10V, I = -1.0mA, f = 1.0kHz fe CE C Current Gain-Bandwidth Product 100 300 MHz f V = -10V, I = -10mA, f = 100MHz T CE C Noise Figure NF 8.0 dB V = -5.0V, I = -200 A, R = 10 , f = 1.0kHz CE C S Notes: 4. Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%. 250 1.0 I = -10mA B I = -8mA B I = -6mA B 0.8 200 I = -4mA B 150 0.6 I = -2mA B 0.4 100 0.2 50 0 0 0 25 50 75 100 125 150 0 1 2 3 4 5 678 9 10 T , AMBIENT TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Collector-Emitter Voltage vs. Ambient Temperature (Note 3) 2 of 5 March 2010 DXT5401 Diodes Incorporated www.diodes.com Document number: DS31226 Rev. 3 - 2 P , POWER DISSIPATION (mW) D I, COLLECTOR CURRENT (mA) C