A Product Line of Diodes Incorporated FMMTL718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data Case: SOT-23 BV > -20V CEO UL Flammability Rating 94V-0 I = -1A Continuous Collector Current C Case material: molded Plastic. I = -2A Peak Pulse Current CM Moisture Sensitivity: Level 1 per J-STD-020D Low Saturation Voltage V < -320mV -1A CE(sat) Terminals: Matte Tin Finish annealed over Copper plated Alloy h characterised up to -1.5A for high current gain hold-up FE 42 leadframe. Solderable per MIL-STD-202, Method 208 500mW power dissipation Weight: 0.008 grams (Approximate) Complementary part number FMMTL618 Lead Free, RoHS Compliant (Note 1) Halogen and Antimony FreeGree Device (Note 2) Applications Qualified to AEC-Q101 Standards for High Reliability MOSFET Gate Driving DC-DC Converters Charging circuit Power switches SOT23 C B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel FMMTL718TA L78 7 8 3,000 Notes: 1. No purposefully added lead. 2. Diodes Inc. s Green Policy can be found on our website at A Product Line of Diodes Incorporated FMMTL718 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage -5 V V EBO Continuous Collector Current -1 A I C Peak Pulse Current -2 A I CM Base Current I -200 mA B Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) P 500 mW D Thermal Resistance, Junction to Ambient (Note 4) R 250 C/W JA Thermal Resistance, Junction to Lead (Note 5) R 197 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 4. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in a steady-state condition. 5. Thermal resistance from junction to solder-point (at the end of the collector lead). Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -20 -65 V I = -100 A CBO C Collector-Emitter Breakdown Voltage (Note 6) BV -20 -55 V I = -10 mA CEO C Emitter-Base Breakdown Voltage BV -5 -8.8 V I = -100 A EBO E Collector Cutoff Current -10 nA I V = -15V CBO CB Emitter Cutoff Current -10 nA I V = -4V EBO EB Collector Emitter Cutoff Current -10 nA I V = -15V CES CE 300 500 I = -10mA, V = -2V C CE 300 450 I = -100mA, V = -2V C CE Static Forward Current Transfer Ratio 200 320 I = -0.5A, V = -2V h C CE FE (Note 6) 120 200 I = -1A, V = -2V C CE 50 80 I = -1.5A, V = -2V C CE -33 -50 mV I =- 100mA, I = -10mA C B Collector-Emitter Saturation Voltage -130 -180 mV I =- 500mA, I = -20mA C B V CE(sat) (Note 6) -230 -320 mV I = -1A, I = -50mA C B -315 -450 mV I = -1.5A, I = -100mA C B Base-Emitter Turn-On Voltage(Note 6) V -0.85 -1.0 V I = -1.25A, V = -2V BE(on) C CE Base-Emitter Saturation Voltage(Note 6) V -0.95 -1.1 V I = -1.25A, I = -100mA BE(sat) C B Equivalent On-Resistance R 210 m I = -1.5A CE(sat) C Output Capacitance C 9 12 pF V = -10V, f = 1MHz obo CB V = -10V, I = -50mA, CE C Transition Frequency f 265 MHz T f = 100MHz Turn-On Time 108 ns t on V =-10V, I =-1A CC C Turn-Off Time 121 ns t off I = I = -10mA B1 B2 Note: 6. Measured under pulsed conditions. Pulse width 300 s. Duty cycle 2% 2 of 5 June 2011 Diodes Incorporated www.diodes.com FMMTL718 Document Number: DS33132 Rev. 2 - 2