FZT849TA Diodes Incorporated

FZT849TA electronic component of Diodes Incorporated
FZT849TA Diodes Incorporated
FZT849TA Bipolar Transistors - BJT
FZT849TA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FZT849TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT849TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. FZT849TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT NPN High Ct Low Sat
Datasheet: FZT849TA Datasheet (PDF)
Price (USD)
1: USD 1.575 ea
Line Total: USD 1.58 
Availability : 11882
  
Ship by Thu. 11 Sep to Mon. 15 Sep
QtyUnit Price
1$ 1.575
10$ 0.9552
100$ 0.5962
500$ 0.4895
1000$ 0.4499
2000$ 0.4092

Availability 11882
Ship by Thu. 11 Sep to Mon. 15 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.575
10$ 0.9552
100$ 0.5962
500$ 0.4895
1000$ 0.4499
2000$ 0.4092


Availability 1062
Ship by Mon. 22 Sep to Thu. 25 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3436
10$ 1.0794
30$ 0.7115
100$ 0.552
500$ 0.4601
1000$ 0.4338


Availability 154
Ship by Thu. 11 Sep to Mon. 15 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.932
10$ 1.218
31$ 0.6356
84$ 0.6006
1000$ 0.5852

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT849TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT849TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Green FZT849 30V NPN MEDIUM POWER HIGH CURRENT TRANSISTOR IN SOT223 Features Mechanical Data BV > 30V Case: SOT223 CEO I = 7A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound UL C I = 20A Peak Pulse Current Flammability Rating 94V-0 CM P = 3W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 D Extremely Low Equivalent On-Resistance R = 36 at 5A Terminals: Finish - Matte Tin Plated Leads Solderable per MIL- CE(SAT) Very Low Saturation Voltages STD-202, Method 208 Complimentary PNP Type FZT949 Weight: 0.112 grams (Approximate) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT223 C B E Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel FZT849TA AEC-Q101 FZT849 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See FZT849 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 7 A C Peak Pulse Current I 20 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 3 (Note 5) 24 Power Dissipation W P D Linear Derating Factor 1.6 mW/C (Note 6) 12.8 (Note 5) 42 R JA Thermal Resistance, Junction to Ambient (Note 6) 78 C/W R JA Thermal Resistance, Junction to Lead (Note 7) 8.8 R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT849 December 2016 Diodes Incorporated www.diodes.com Document number: DS33173 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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