Green HDS20M 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary ( T = +25C) Features and Benefits A Glass Passivated Die Construction V (V) I (A) V (V) I (A) RRM O F R Miniature Package Saves Space on PC Boards 1000 2 0.95 5 Low Leakage Current Ideal for SMT Manufacturing Low Forward Voltage Drop Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data Suitable for AC to DC bridge full wave rectification for SMPS, LED Case: HDS lighting, adapter, battery charger, home appliances, office equipment, Case Material: Molded Plastic. UL Flammability Classification and telecommunication applications. Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Lead Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Weight: 0.0923 grams (Approximate) Pin Diagram Top View Internal Schematic Ordering Information (Note 4) Part Number Compliance Case Packaging HDS20M-13 Commercial HDS 5,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See HDS20M Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 1000 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 700 V R(RMS) Average Rectified Output Current (Note 5) T = +88C I 2.0 A C O Non-Repetitive Peak Forward Surge Current, 8.3ms I 55 A FSM Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Peak Forward Surge Current, 1ms 110 A I FSM Single Half Sine-Wave Superimposed on Rated Load 2 2 2 8.03 I t Rating for Fusing (1ms < t < 8.3ms) I t A S Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Ambient (Note 6) 20 C/W R JA (Per Element) Typical Thermal Resistance, Junction to Case (Per Element) 16 C/W R JC Typical Thermal Resistance, Junction to Lead (Per Element) 18 C/W R JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 1,000 Reverse Breakdown Voltage (Note 7) V V I = 5A (BR)R R Forward Voltage (Per Element) V 0.92 0.95 V I = 1A, T = +25C F F A V = 1,000V, T = +25C 0.11 5 R A Leakage Current (Note 7) (Per Element) A I R 45 100 VR = 1,000V, TA = +125C Total Capacitance (Per Element) 13 pF C V = 4V, f = 1.0MHz T R Notes: 5. Perform static test after the temperature of oven is steady 20 minutes. 2 6. Device mounted on glass epoxy substrate with 1oz/ft , 30mmx30mm copper pad per pin. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 HDS20M December 2017 Diodes Incorporated www.diodes.com Document number: DS39300 Rev. 3 - 2 ADVANCED INFORMATION