MMBT5551-7-F Diodes Incorporated

MMBT5551-7-F electronic component of Diodes Incorporated
MMBT5551-7-F Diodes Incorporated
MMBT5551-7-F Bipolar Transistors - BJT
MMBT5551-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT5551-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT5551-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS NPN 300mW
Datasheet: MMBT5551-7-F Datasheet (PDF)
Price (USD)
9000: USD 0.0421 ea
Line Total: USD 378.9 
Availability : 5278740
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
9000$ 0.0421
9000$ 0.0374
9000$ 0.0325
15000$ 0.0221
21000$ 0.0177
30000$ 0.0168
75000$ 0.0166
150000$ 0.0165
300000$ 0.0152

Availability 5278740
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0421
9000$ 0.0374
9000$ 0.0325
15000$ 0.0221
21000$ 0.0177
30000$ 0.0168
75000$ 0.0166
150000$ 0.0165
300000$ 0.0152


Availability 35393
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.225
10$ 0.1412
100$ 0.084
500$ 0.0587
1000$ 0.0495
3000$ 0.0352
6000$ 0.0308
9000$ 0.0264
24000$ 0.0253


Availability 1201830
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 15000
Multiples : 3000
QtyUnit Price
15000$ 0.019
60000$ 0.0175
90000$ 0.0171


Availability 18876
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0576
200$ 0.0456
600$ 0.0291
3000$ 0.0201
9000$ 0.0178
21000$ 0.0164


Availability 2820
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.224
10$ 0.1554
50$ 0.1008
100$ 0.0826
500$ 0.056


Availability 5278740
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0421
9000$ 0.0374
9000$ 0.0325
15000$ 0.0221
21000$ 0.0177
30000$ 0.0168
75000$ 0.0166
150000$ 0.0165
300000$ 0.0152

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT5551-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBT5551-7-F is a transistors bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is a NPN 300mW surface mount (SMD) device, specifically designed for use in a wide range of applications. The device features a low leakage current, high gain, and high output current, as well as respectable high speed switching and good thermal stability. It is also noted for its low power consumption and its ability to be used in a wide range of temperature ranges (-65°C to +150°C). This device can be used for various power applications, allowing users with different power requirements to use a single device for their applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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