MMDT2222V-7 Diodes Incorporated

MMDT2222V-7 electronic component of Diodes Incorporated
MMDT2222V-7 Diodes Incorporated
MMDT2222V-7 Bipolar Transistors - BJT
MMDT2222V-7  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMDT2222V-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMDT2222V-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMDT2222V-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN BIPOLAR
Datasheet: MMDT2222V-7 Datasheet (PDF)
Price (USD)
6000: USD 0.082 ea
Line Total: USD 492 
Availability : 1926420
  
Ship by Fri. 01 Aug to Thu. 07 Aug
QtyUnit Price
6000$ 0.082

Availability 858
Ship by Fri. 08 Aug to Wed. 13 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2508
50$ 0.2206
150$ 0.1557
500$ 0.1291
3000$ 0.1242
6000$ 0.1213


Availability 5348
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5625
10$ 0.3462
100$ 0.2052
500$ 0.1441
1000$ 0.1287
3000$ 0.1078
6000$ 0.0979
9000$ 0.0836
24000$ 0.0825


Availability 1926420
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.082

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMDT2222V-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDT2222V-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMDT2222V 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BV > 40V Case: SOT563 CEO Case Material: Molded Plastic, Green Molding Compound Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals: Finish Matte Tin Finish. Solderable per MIL-STD- Complementary PNP Type: MMDT2907V 202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.003 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT563 Device Schematic Bottom View Top View Top View Ordering Information (Note 4) Product Status Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MMDT2222V-7 Active AEC-Q101 KAT 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMDT2222V Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 75 V VCBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage 6.0 V V EBO Collector Current 600 mA I C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 150 mW D Thermal Resistance, Junction to Ambient (Note 5) R 833 C/W JA Operating and Storage and Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristic and Derating Information 2 of 6 MMDT2222V February 2016 Diodes Incorporated www.diodes.com Document number: DS30563 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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