S1MDFQ
Green
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Product Summary (@T = +25C) Features and Benefits
A
V (V) I (A) V (MAX) (V) I (A) Glass Passivated Die Construction
RRM O F R(MAX)
Surge Overload Rating to 30A Peak
1,000 1 1.1 5
High Current Capability
Low-Profile Design, Package Height Less than 1.1mm
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
The S1MDFQ is a rectifier packaged in the low-profile D-FLAT
package. Providing high current capability for standard rectification,
Case: D-FLAT
this device is ideal for use in general applications such as:
Case Material: Molded Plastic, Green Molding Compound;
UL Flammability Classification Rating 94V-0
Reverse Protection
Moisture Sensitivity: Level 1 per J-STD-020
Switching
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Blocking
e3
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.035 grams (Approximate)
D-FLAT
Top View
Ordering Information (Note 5)
Part Number Compliance Case Packaging
S1MDFQ-13 Automotive D-FLAT 10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
S1MDFQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
V
Peak Repetitive Reverse Voltage RRM
Working Peak Reverse Voltage 1,000 V
V
RWM
DC Blocking Voltage (Note 8)
V
R
RMS Reverse Voltage V 700 V
R(RMS)
Average Rectified Output Current @ T = +100C I 1.0 A
A O
Non-Repetitive Peak Forward Surge Current 8.3ms
I 30 A
FSM
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal (Note 7) R 34 C/W
JT
Typical Thermal Resistance, Junction to Air (Note 7) R 88 C/W
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 8) 1,000 V
V I = 5A
(BR)R R
0.94 1.1 I = 1A, T = +25C
F J
Forward Voltage V V
F
0.84
I = 1A, T = +125C
F J
0.11 5 A V = 1,000V, T = +25C
R J
Reverse Leakage Current (Note 8)
I
R
0.004 mA
V = 1,000V, T = +125C
R J
Total Capacitance 6 pF
C V = 4V , f = 1MHz
T R DC
Notes: 6. Device mounted on FR-4 substrate, 1" x 1", 2oz., single-sided, PC boards with 0.1" x 0.15" copper pads.
7. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz., single-sided, PC boards with 0.2" x 0.25" copper pads.
8. Short duration pulse test used to minimize self-heating effect.
1.8 100
1.6
T = 150C
A
1.4
10
T = 125C
1.2 A
Note 7
1
1
T = 85C
A
0.8
T = 100C
A
Note 6
0.6
T = 25C
A
0.1
0.4
T = -55C
A
0.2
0.01
0
0.4 0.6 0.8 1.0 1.2 1.4
25 50 75 100 125 150
T , AMBIENT TEMPERATURE (C) V , FORWARD VOLTAGE (V)
F
A
Figure 1 DC Forward Current Derating Figure 2 Instantaneous Forward Voltage
2 of 4
S1MDFQ May 2016
Diodes Incorporated
www.diodes.com
Document number: DS38658 Rev. 2 - 2
ADVANCED INFORMATION
I , DC FORWARD CURRENT (A)
F
I , INSTANTANEOUS FORWARD CURRENT (A)
F