S8NC Green 8.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Product Summary T = +25C Features and Benefits A V (V) I (A) V (V) I (A) Glass Passivated Die Construction RRM O F R Low Forward Voltage Drop and High Current Capability 1200 8 1.1 10 Surge Overload Rating to 225A Peak High Reverse Breakdown Voltage of 1200V Lead-Free Finish/RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: SMC 8.0A Surface Mount Glass Passivated Rectifier in SMC package, Case Material: Molded Plastic. UL Flammability Classification offers high current capability and low forward voltage drop, designed Rating 94V-0 with guard ring for transient protection and high surge capacity. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Alloy Power Supplies Leadframe. Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.26 grams (Approximate) Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging S8NC-13 SMC 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See S8NC Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 1200 V RWM V DC Blocking Voltage V R RMS Reverse Voltage V 850 V R(RMS) Average Rectified Output Current T = +25C I 8.0 A T O Non-Repetitive Peak Forward Surge Current, 8.3ms I 225 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 5) R 10.4 C/W JT Operating and Storage Temperature Range T T -65 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 1200 Reverse Breakdown Voltage (Note 7) V V I = 10A (BR)R R 1.1 I = 8.0A, T = +25C 0.98 F A Forward Voltage V V F 0.885 1.0 I = 8.0A, T = +125C F A 0.22 10 V =1200V, T = +25C R A Leakage Current (Note 7) I A R 500 20 V =1200V, T = +125C R A 40 Total Capacitance (Note 8) C pF V = 4V, f =1.0MHz T R Notes: 5. The device has two heat sinks of size 20mm * 70mm attached to each terminal (i.e. four heat sinks total). 6. Device mounted on FR-4 substrate, 0.4in. * 0.5in. 2oz single-sided, PC board with 0.2in. * 0.25in. copper pads. 7. Short duration pulse test used to minimize self-heating effect. 8. Measured at f = 1.0MHz and applied reverse voltage of VR=4.0V DC. 9 100 8 T =150C A T = 125C A 7 10 T =100C 6 A 5 Note 5 1 4 3 T = 85C A 0.1 2 Note 6 T = 25C A 1 T = -55C A 0 0.01 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 T AMBIENT TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) A, F Figure 1 Forward Current Derating Figure 2 Typical Forward Characteristics 2 of 4 S8NC December 2014 Diodes Incorporated www.diodes.com Document number: DS36851 Rev. 3 - 2 I , DC FORWARD CURRENT (A) F I , INSTANTANEOUS FORWARD CURRENT (A) F