SBR12A45SD1-T-01 Diodes Incorporated

SBR12A45SD1 12A SBR SUPER BARRIER RECTIFIER Features Mechanical Data Designed as Bypass Diodes for Solar Panels Case: DO-201AD Selectively Rated for +200C Maximum Junction Temperature Case Material: Molded Plastic, UL Flammability Classification for High Thermal Reliability Rating 94V-0 Patented Super Barrier Rectifier Technology Moisture Sensitivity: Level 1 per J-STD-020 High Forward Surge Capability Terminals: Finish Tin Plated Leads. Solderable per MIL-STD- Ultra Low Forward Voltage Drop 202, Method 208 Excellent High Temperature Stability Weight: 1.21 grams (approximate) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Top View Ordering Information (Notes 4 & 5) Part Number Case Packaging Pb SBR12A45SD1-T DO-201AD 1200/Tape & Reel, 13-inch SBR12A45SD1-T-G DO-201AD 1200/Tape & Reel, 13-inch Green Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SBR12A45SD1 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 45 V V RWM DC Blocking Voltage V RM RMS Reverse Voltage V 32 V R(RMS) Average Rectified Output Current 12 A I O Non-Repetitive Avalanche Energy EAS 20 mJ (T = +25C , IAS = 20A , L = 8.5mH) J Non-Repetitive Peak Forward Surge Current 8.3ms 200 A I FSM Single Half Sine-Wave Superimposed on Rated Load Peak Repetitive Reverse Surge Current (2S 1KHz) 2 A I RRM Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Thermal Resistance Junction to Ambient (Note 6) R 31 C/W JA Thermal Resistance Junction to Lead (Note 6) T = +135C 7.2 L R JL V 80% V -65 to +150 R RRM Operating Temperature Range T C V 50% V J 180 R RRM DC Forward Mode 200 Storage Temperature Range T -65 to +175 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V 45 V I = 0.5mA (BR)R R 0.43 0.48 I = 12A, T = +25C F J Forward Voltage Drop V V F 0.40 0.44 I = 12A, T = +125C F J V = 45V, T = +25C 50 500 A R J Leakage Current (Note 7) I 40 mA V = 45V, T = +125C R R J 27 100 mA V = 45V, T = +150C R J Notes: 6. Device mounted on 2 x 2 (50mm x 50mm) copper pad, with lead length 0.5 . 7. Short duration pulse test used to minimize self-heating effect. 2 of 4 July 2012 SBR12A45SD1 Diodes Incorporated www.diodes.com Document number: DS31452 Rev. 6 - 2 SBR is a registered trademark of Diodes Incorporated.