SBR1A30T5 1A SBR SUPER BARRIER RECTIFIER Product Summary Features and Benefits Patented SBR Technology provides superior Avalanche V (V) I (A) V max (V) I (mA) RRM O F R max Capability versus Schottky Diodes, ensuring more rugged and 30 1 0.57 0.2 reliable end applications Reduced Ultra-Low Forward Voltage Drop (V ) Better Efficiency F and Cooler Operation Description and Applications Reduced High Temperature Reverse Leakage Increased Reliability Against Thermal Runaway Failure in High Packaged in the compact SOD523 package, the SBR1A30T5 Temperature Operation provides very low V and excellent reverse leakage stability at high F Low Profile Package Ideal for Thin Applications temperatures. It is ideal for use as a rectifier, freewheel diode or Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) blocking diode in: Halogen and Antimony Free. Green Device (Note 3) DC/DC Converters Qualified to AEC-Q101 Standards for High Reliability AC/DC Adaptors An Automotive-Compliant Part is Available Under Separate Datasheet (SBR1A30T5Q) SOD523 Mechanical Data Case: SOD523 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: Cathode Band Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe Top View Top View Solderable per MIL-STD-202, Method 208 Polarity: See Below Weight: 0.001 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging SBR1A30T5-7 SOD523 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SBR1A30T5 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 30 V RWM DC Blocking Voltage V RM Average Rectified Output Current 1 A I O Non-Repetitive Peak Forward Surge Current 8.3ms I 10 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R JA 350 C/W16 0 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.30 I = 100mA, T = +25C F J Forward Voltage Drop (Note 6) V V F 0.50 0.57 IF = 1A, TJ = +25C 0.01 0.2 V = 30V, T = +25C R J Leakage Current (Note 6) I mA R 1.5 V = 30V, T = +125C R J I = 10mA, I = 0.1*I , F RR R Reverse Recovery Time 15 ns t RR T = +25C A Typical Capacitance C 95 pF V = 1.0V, f = 1MHz T R Notes: 5. Device mounted on 1inch sq. copper pad,2oz. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 SBR1A30T5 November 2016 Diodes Incorporated www.diodes.com Document number: DS38202 Rev. 6 - 2 ADVNAENWC EPDR OINDFUOCRTM ATIN