NOT RECOMMENDED FOR NEW DESIGN - SBRT10M50SP5 CONTACT US Green 10A TRENCH SBR TRENCH SUPER BARRIER RECTIFIER POWERDI5 Product Summary ( T = +25C) Features and Benefits A Ultra Low Forward Voltage Drop (V ) Helps Minimizes Power F V (V) I (A) V (V) I (mA) RRM O F(MAX) R(MAX) Losses 50 10 0.47 0.15 Excellent Reverse Leakage (I ) Stability at Higher Temperatures R Thermally Efficient Package for Cooler Running Applications Less than 1.1mm Package Profile Ideal for Thin Applications Description and Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Packaged in the compact thermally efficient PowerDI 5 package, the For automotive applications requiring specific change control Trench SBR SBRT10M50SP5 provides ultra-low reverse leakage (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and (I ) and provides excellent forward voltage drop (V ) at high R F manufactured in IATF 16949 certified facilities), please refer temperatures. It is ideal for use as a rectification, freewheeling or to the related automotive grade (Q-suffix) part. A listing can polarity protection diode in applications such as: be found at SBRT10M50SP5 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 50 V V RRM DC Blocking Voltage Average Rectified Output Current 10 A I O Non-Repetitive Peak Forward Surge Current 8.3ms 300 A I FSM Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 6) R 18 C/W JA Typical Thermal Resistance Junction to Case (Note 6) R 2 C/W JC Typical Thermal Resistance Junction to Lead (Notes 6 and 7) 4 C/W RJL Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition I = 5A, T = +85C 0.31 F J Forward Voltage Drop V 0.42 0.47 V I = 10A, T = +25C F F J 0.36 0.41 I = 10A, T = +125C F J V = 50V, T = +25C 0.06 0.15 R J Leakage Current (Note 8) I 2 12 mA V = 50V, T = +85C R R J 15 50 V = 50V, T = +125C R J Notes: 6. Device mounted on FR4 PCB with 1inch copper pad layout with AL substrate and additional HK1 (37mm x 55mm x15mm). 7. Junction to Lead (Cathode Terminal). 8. Short duration pulse test used to minimize self-heating effect. 100 4.5 4.0 10 T = 150C AT = 150C A 3.5 T = 125C 1 A T = 125C A 3.0 0.1 2.5 T = 85C TA = 85C A 2.0 0.01 TTA == 2255CC A 1.5 T = -55C A T = -55C A 0.001 1.0 0.0001 0.5 0.0 0.00001 0 2 4 6 8 10 12 0 100 200 300 400 500 600 I AVERAGE FORWARD CURRENT (A) F(AV) V , INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 1 Forward Power Dissipation F Figure 2 Typical Forward Characteristics 2 of 5 April 2021 SBRT10M50SP5 Diodes Incorporated www.diodes.com Document number: DS36537 Rev. 5 - 3 NEW PRODUCT ADVANCED INFORMATION P , AVERAGE FORWARD POWER DISSIPATION (W) F(AV) I , INSTANTANEOUS FORWARD CURRENT (A) F