SDM1A30CSP 1A SCHOTTKY BARRIER RECTIFER CHIP SCALE PACKAGE Product Summary Features and Benefits Off Board Profile of 0.275mm More than 30% Thinner than V (V) I (A) V (mV) I (A) RRM O F MAX R MAX DFN1006 30 1 525 100 Low Forward Voltage (V ) Minimizes Conduction Losses and F Improves Efficiency Description Reduced High Temperature Reverse Leakage Increased The SDM1A30CSP is a 30V 1A Schottky barrier rectifier that is Reliability Against Thermal Runaway Failure in High optimized for low forward voltage drop and low-leakage current, Temperature Operation housed in a compact chip scale package (CSP) that occupies only Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 2 0.6mm board space. The low thermal resistance enables designers Halogen and Antimony Free. Green Device (Note 3) to meet design challenges of increasing efficiency while also reducing board space. Mechanical Data Applications Case: X3-WLB1006-2 It is ideally suited for use in portable applications as a: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiAu Bump. Solderable per MIL-STD-202, Method Blocking Diode e4 208 Boost Diode Polarity: Cathode Dot Switching Diode Weight: 0.001 grams (Approximate) Reverse Protection Diode Ordering Information (Note 4) Part Number Case Packaging SDM1A30CSP-7 X3-WLB1006-2 5000/Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See SDM1A30CSP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Average Rectified Output Current I 1 A O Repetitive Peak Forward Current 4 A I FRM (Pulse Wave = 1ms, Duty Cycle = 25%) Non-Repetitive Peak Forward Surge Current 8.3ms I 15 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 135 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 395 440 I = 0.5A, T = +25C F J Forward Voltage Drop V 475 525 mV I = 1.0A, T = +25C F F J 425 I = 1.0A, T = +125C F J 6 20 V = 10V, T = +25C R J A 20 Leakage Current (Note 6) I 100 V = 30V, T = +25C R R J 8 mA V = 30V, T = +125C R J Junction Capacitance C 40 pF V = 4V, f = 1.0MHz T R Notes: 5. Device mounted on FR-4 PCB, 2oz. Copper, minimum recommended pad layout per