SDM1L30CSP 1A SCHOTTKY BARRIER DIODE CHIP SCALE PACKAGE Product Summary Features and Benefits 2 V (V) I (mA) 2 mm Footprint 67% smaller than PowerDI123 F(MAX) R(MAX) V (V) I (A) RRM O +25C +25C Off Board Profile of 0.3mm 70% thinner than PowerDI123 30 1.0 0.40 1.0 Low Forward Voltage Drop reduces Power Dissipation Soft switching characteristic ensures that EMI and EFI are minimised Guard Ring Die Construction for Transient Protection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: X2-WLB2010-2 The SDM1L30CSP is a 30-volt 1A Schottky barrier diode that is Moisture Sensitivity: Level 1 per J-STD-020 optimized for low forward voltage and soft switching characteristics to Terminals: Solderable per MIL-STD-202, Method 208 meet the needs of wireless charging applications. It is housed in a 2 Polarity: Cathode Dot compact chip scale package (CSP) that occupies only 2 mm board- Weight: 0.15mg space. It is ideally suited for use in portable applications. Ordering Information (Note 4) Part Number Case Packaging SDM1L30CSP-7 X2-WLB2010-2 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SDM1L30CSP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Average Rectified Output Current I 1.0 A O Non-Repetitive Peak Forward Surge Current 8.3ms 25 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) 130 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.35 0.40 I = 1.0A, T = +25C F J Forward Voltage Drop V V F 0.29 I = 1.0A, T = +85C F J 0.47 1.0 mA V = 30V, T = +25C R J Leakage Current (Note 6) I R 17 mA V = 30V, T = +85C R J Total Capacitance C 150 pF V = 5V, f = 1.0 MHz T R Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per