ZHCS1000QTA Diodes Incorporated

ZHCS1000QTA SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary Features and Benefits High Current Capability (I = 1A) F V 1A I V =30V F(TYP) R(TYP) R V (V) I (A) RRM O Low V F (V) (A) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40 1 0.425 50 Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications Mechanical Data DC-DC Converters Mobile Telecomms Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Blocking Diodes Flammability Classification Rating 94V-0 Reverse Polarity Protection Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0089 grams (Approximate) Top View Ordering Information (Note 5) Device Case Packaging ZHCS1000QTA SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZHCS1000QTA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Continuous Reverse Voltage V 40 V R I 1 A O Forward Voltage I = 1A (Typ) V 425 mV F F Average Peak Forward Current D.C. = 50% I 1750 mA F(AV) t 100s 12 A Non Repetitive Forward Current I FSM 5.2 A t 10ms Thermal Characteristics Characteristic Symbol Value Unit 500 mW Power Dissipation, T = +25C P A D Junction Temperature +125 C T J Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage V 40 60 V I = 300A (BR)R R 240 270 I = 50mA F 265 290 I = 100mA F 305 340 I = 250mA F 355 400 IF = 500mA Forward Voltage (Note 6) mV V F 390 450 I = 750mA F 425 500 I = 1A F 495 600 I = 1.5A F 420 I = 1A, T = +100C F A Reverse Current (Note 7) I 50 100 A V = 30V R R Total Capacitance C 25 pF f = 1MHz, V = 30V T R Switched from I = 500mA to F Reverse Recovery Time t 12 ns I = 500mA RR R Measured I = 50mA R Notes: 6. Measured under pulsed conditions. Pulse width = 300S. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 ZHCS1000QTA December 2015 Diodes Incorporated www.diodes.com Document number: DS38370 Rev. 1 - 2 NEW PRODUCT