E (Volts) VB - h E F - Normalised Gain (%) VCE(sat) - (Volts) IC - Collector Current (Amps) VBE(sat) - (Volts) Switching time NPN SILICON PLANAR ZTX450 ZTX450 MEDIUM POWER TRANSISTORS ZTX451 ZTX451 ISSUE 2 MARCH 1994 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO * 1 Amp continuous current IB1=IB2=IC/10 ts td,tr,tf VCE=-10V 0.4 nS *P = 1 Watt ns tot 800 140 700 0.3 120 C IC/IB=10 B 100 600 ts E 80 0.2 500 td 60 400 E-Line tf 0.1 40 300 TO92 Compatible tr ZTX450 20 200 ABSOLUTE MAXIMUM RATINGS. 100 0 0 0.001 0.01 0.1 1 PARAMETER SYMBOL ZTX450 ZTX451 UNIT 0.01 0.1 1 Collector-Base Voltage V 60 80 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 45 60 V CEO VCE(sat) v IC Typical Switching Speeds Emitter-Base Voltage V 5V EBO Peak Pulse Current I 2A CM Continuous Collector Current I 1A C 100 Power Dissipation at T =25C P 1W amb tot 1.0 IC/IB=10 80 Operating and Storage Temperature Range T :T -55 to +200 C 0.9 j stg 0.8 60 ELECTRICAL CHARACTERISTICS (at T = 25C). 0.7 amb 0.6 PARAMETER SYMBOL ZTX450 ZTX451 UNIT CONDITIONS. 40 0.5 MIN. MAX. MIN. MAX. 0.4 20 0.3 Collector-Base V 60 80 V I =100A (BR)CBO C Breakdown Voltage 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 Collector-Emitter V 45 60 V I =10mA* CEO(sus) C IC - Collector Current (Amps) IC - Collector Current (Amps) Sustaining Voltage Emitter-Base V 55V I =100A hFE v IC VBE(sat) v IC (BR)EBO E Breakdown Voltage Single Pulse Test at T =25C amb Collector Cut-Off I 0.1 A V =45V 10 CBO CB 1.4 Current 0.1 V =60V A CB V Emitter Cut-Off I 0.1 0.1 A =4V EBO EB 1.2 Current 1 Collector-Emitter V 0.25 0.35 V I =150mA, I =15mA* CE(sat) C B 1.0 D.C. Saturation Voltage 1s 100ms 10ms Base-Emitter V 1.1 1.1 V I =150mA, I =15mA* 0.8 BE(sat) C B 1.0ms 0.1 Saturation Voltage 300s 100s ZTX450 0.6 Static Forward h 100 300 50 150 I =150mA, V =10V* FE C CE Current Transfer 15 10 I =1A, V =10V* C CE 0.001 0.01 0.1 1 10 Ratio 0.01 0.1 110 100 Transition f 150 150 MHz I =50mA, V =10V IC - Collector Current (Amps) VCE - Collector Voltage (Volts) T C CE Frequency f=100MHz BE(on) C V v I Safe Operating Area Output Capacitance C 15 15 pF V =10V, f=1MHz obo CB 3-176 3-175 ZTX451 ZTX451E (Volts) VB - h E F - Normalised Gain (%) VCE(sat) - (Volts) IC - Collector Current (Amps) VBE(sat) - (Volts) Switching time NPN SILICON PLANAR ZTX450 ZTX450 MEDIUM POWER TRANSISTORS ZTX451 ZTX451 ISSUE 2 MARCH 1994 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO * 1 Amp continuous current IB1=IB2=IC/10 ts td,tr,tf VCE=-10V 0.4 nS *P = 1 Watt ns tot 800 140 700 0.3 120 C IC/IB=10 B 100 600 ts E 80 0.2 500 td 60 400 E-Line tf 0.1 40 300 TO92 Compatible tr ZTX450 20 200 ABSOLUTE MAXIMUM RATINGS. 100 0 0 0.001 0.01 0.1 1 PARAMETER SYMBOL ZTX450 ZTX451 UNIT 0.01 0.1 1 Collector-Base Voltage V 60 80 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 45 60 V CEO VCE(sat) v IC Typical Switching Speeds Emitter-Base Voltage V 5V EBO Peak Pulse Current I 2A CM Continuous Collector Current I 1A C 100 Power Dissipation at T =25C P 1W amb tot 1.0 IC/IB=10 80 Operating and Storage Temperature Range T :T -55 to +200 C 0.9 j stg 0.8 60 ELECTRICAL CHARACTERISTICS (at T = 25C). 0.7 amb 0.6 PARAMETER SYMBOL ZTX450 ZTX451 UNIT CONDITIONS. 40 0.5 MIN. MAX. MIN. MAX. 0.4 20 0.3 Collector-Base V 60 80 V I =100A (BR)CBO C Breakdown Voltage 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 Collector-Emitter V 45 60 V I =10mA* CEO(sus) C IC - Collector Current (Amps) IC - Collector Current (Amps) Sustaining Voltage Emitter-Base V 55V I =100A hFE v IC VBE(sat) v IC (BR)EBO E Breakdown Voltage Single Pulse Test at T =25C amb Collector Cut-Off I 0.1 A V =45V 10 CBO CB 1.4 Current 0.1 V =60V A CB V Emitter Cut-Off I 0.1 0.1 A =4V EBO EB 1.2 Current 1 Collector-Emitter V 0.25 0.35 V I =150mA, I =15mA* CE(sat) C B 1.0 D.C. Saturation Voltage 1s 100ms 10ms Base-Emitter V 1.1 1.1 V I =150mA, I =15mA* 0.8 BE(sat) C B 1.0ms 0.1 Saturation Voltage 300s 100s ZTX450 0.6 Static Forward h 100 300 50 150 I =150mA, V =10V* FE C CE Current Transfer 15 10 I =1A, V =10V* C CE 0.001 0.01 0.1 1 10 Ratio 0.01 0.1 110 100 Transition f 150 150 MHz I =50mA, V =10V IC - Collector Current (Amps) VCE - Collector Voltage (Volts) T C CE Frequency f=100MHz BE(on) C V v I Safe Operating Area Output Capacitance C 15 15 pF V =10V, f=1MHz obo CB 3-176 3-175 ZTX451 ZTX451